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TITLE: Further insight into the temperature quenching of photoluminescence from InAs/GaAs self-assembled quantum dots  Full Text
AUTHORS: Chahboun, A ; Vasilevskiy, MI ; Baidus, NV; Cavaco, A; Sobolev, NA; Carmo, MC; Alves, E ; Zvonkov, BN;
PUBLISHED: 2008, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 103, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 18
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TITLE: Preliminary investigations of infrared Er-related photoluminescence in ion-implanted In0.07Ga0.93N  Full Text
AUTHORS: Correia, MR ; Pereira, S ; Cavaco, A; Pereira, E; Alves, E ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 24
INDEXED IN: Scopus WOS CrossRef: 6
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TITLE: Enhanced radiation hardness of InAs/GaAs quantum dot structures  Full Text
AUTHORS: Sobolev, NA; Cavaco, A; Carmo, MC; Grundmann, M; Heinrichsdorff, F; Bimberg, D;
PUBLISHED: 2001, SOURCE: International Conference on Semiconductor Quantum Dots (QD2000) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 224, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 25