Nikolai Andreevitch Sobolev
AuthID: R-000-DJF
181
TITLE: Defects incorporating Ge atoms in irradiated Si : Ge Full Text
AUTHORS: Sobolev, NA; Nazare, MH;
PUBLISHED: 1999, SOURCE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4
AUTHORS: Sobolev, NA; Nazare, MH;
PUBLISHED: 1999, SOURCE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4
182
TITLE: New paramagnetic defects in synthetic diamonds grown using nickel catalyst Full Text
AUTHORS: Neves, AJ ; Pereira, R ; Sobolev, NA; Nazare, MH; Gehlhoff, W; Naser, A; Kanda, H;
PUBLISHED: 1999, SOURCE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4
AUTHORS: Neves, AJ ; Pereira, R ; Sobolev, NA; Nazare, MH; Gehlhoff, W; Naser, A; Kanda, H;
PUBLISHED: 1999, SOURCE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4
183
TITLE: Amorphous-crystalline transition in Si/Ge superlattice during ion implantation
AUTHORS: Sobolev, NA; Kaiser, U; Khodos, II; Presting, H; Konig, U;
PUBLISHED: 1999, SOURCE: Conference on Applications of the Nuclear Physics Methods in Magnetism and Science of Materials in IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, VOLUME: 63, ISSUE: 7
AUTHORS: Sobolev, NA; Kaiser, U; Khodos, II; Presting, H; Konig, U;
PUBLISHED: 1999, SOURCE: Conference on Applications of the Nuclear Physics Methods in Magnetism and Science of Materials in IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, VOLUME: 63, ISSUE: 7
INDEXED IN: 
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ORCID
ORCID184
TITLE: Amorphization mechanism of Si Ge superlattices upon ion implantation
AUTHORS: Sobolev, NA; Kaiser, U; Khodos, II; Presting, H; Konig, U;
PUBLISHED: 1999, SOURCE: Symposium on Microstructural Processes in Irradiated Materials, at the 1998 Fall MRS Meeting in MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, VOLUME: 540
AUTHORS: Sobolev, NA; Kaiser, U; Khodos, II; Presting, H; Konig, U;
PUBLISHED: 1999, SOURCE: Symposium on Microstructural Processes in Irradiated Materials, at the 1998 Fall MRS Meeting in MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, VOLUME: 540
INDEXED IN: Scopus WOS
Scopus WOS IN MY: ORCID
ORCID185
TITLE: Ion beam induced structural transformations in Si<inf>m</inf>Ge<inf>n</inf> superlattices
AUTHORS: Sobolev N.A.; Gerster J.; Mauckner G.; Wolpert M.; Limmer W.; Thonke K.; Sauer R.; Presting H.; König U.;
PUBLISHED: 1998, SOURCE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 136-138
AUTHORS: Sobolev N.A.; Gerster J.; Mauckner G.; Wolpert M.; Limmer W.; Thonke K.; Sauer R.; Presting H.; König U.;
PUBLISHED: 1998, SOURCE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 136-138
INDEXED IN: Scopus
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ORCID186
TITLE: On the amorphization of the Si/Ge superlattices upon ion bombardment
AUTHORS: Sobolev N.A.; Gartner K.; Kaiser U.; Konig U.; Presting H.; Weber B.; Wendler E.; Wesch W.;
PUBLISHED: 1997, SOURCE: Materials Science Forum, VOLUME: 248-249
AUTHORS: Sobolev N.A.; Gartner K.; Kaiser U.; Konig U.; Presting H.; Weber B.; Wendler E.; Wesch W.;
PUBLISHED: 1997, SOURCE: Materials Science Forum, VOLUME: 248-249
INDEXED IN: Scopus
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ORCID187
TITLE: Luminescence of copper-aluminum diselenide
AUTHORS: Savchuk V.; Korzun B.; Sobolev N.; Makovetskaya L.;
PUBLISHED: 1997, SOURCE: Semiconductors, VOLUME: 31, ISSUE: 3
AUTHORS: Savchuk V.; Korzun B.; Sobolev N.; Makovetskaya L.;
PUBLISHED: 1997, SOURCE: Semiconductors, VOLUME: 31, ISSUE: 3
INDEXED IN: Scopus
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ORCID188
TITLE: Influence of electron irradiation and annealing on the photoluminescence of Si/Ge superlattices and Si/Ge quantum wells
AUTHORS: Sobolev N.A.; Korshunov F.P.; Sauer R.; Thonke K.; König U.; Presting H.;
PUBLISHED: 1996, SOURCE: Journal of Crystal Growth, VOLUME: 167, ISSUE: 3-4
AUTHORS: Sobolev N.A.; Korshunov F.P.; Sauer R.; Thonke K.; König U.; Presting H.;
PUBLISHED: 1996, SOURCE: Journal of Crystal Growth, VOLUME: 167, ISSUE: 3-4
INDEXED IN: Scopus
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ORCID189
TITLE: Hydrogen effects on the electrical and optical properties of γ-irradiated n-type GaAs epilayers
AUTHORS: Ulyashin A.; Yu A Bumai; Shlopak N.; Sobolev N.; Prokhorenko T.;
PUBLISHED: 1996, SOURCE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 108, ISSUE: 1-2
AUTHORS: Ulyashin A.; Yu A Bumai; Shlopak N.; Sobolev N.; Prokhorenko T.;
PUBLISHED: 1996, SOURCE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 108, ISSUE: 1-2
INDEXED IN: Scopus
Scopus IN MY: ORCID
ORCID190
TITLE: Influence of ianthanides on the defect-impurity composition of GaP epitaxial layers
AUTHORS: Aleshin V.D.; Brinkevich D.I.; Vabishchevich S.A.; Sobolev N.A.;
PUBLISHED: 1996, SOURCE: Semiconductors, VOLUME: 30, ISSUE: 5
AUTHORS: Aleshin V.D.; Brinkevich D.I.; Vabishchevich S.A.; Sobolev N.A.;
PUBLISHED: 1996, SOURCE: Semiconductors, VOLUME: 30, ISSUE: 5
INDEXED IN: Scopus
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ORCID