Nikolai Andreevitch Sobolev
AuthID: R-000-DJF
191
TITLE: Photoluminescence of gallium phosphide epitaxial layers doped with rare-earth elements
AUTHORS: Brinkevich, DI; Vabishchevich, SA; Sobolev, NA;
PUBLISHED: 1996, SOURCE: Journal of Applied Spectroscopy, VOLUME: 63, ISSUE: 2
AUTHORS: Brinkevich, DI; Vabishchevich, SA; Sobolev, NA;
PUBLISHED: 1996, SOURCE: Journal of Applied Spectroscopy, VOLUME: 63, ISSUE: 2
192
TITLE: Exciton transitions in photoluminescence spectra of AIAs/GaAs superlattices
AUTHORS: Chao Chen; Sobolev, NA; Tarasik, MI;
PUBLISHED: 1994, SOURCE: Journal of Applied Spectroscopy, VOLUME: 61, ISSUE: 3-4
AUTHORS: Chao Chen; Sobolev, NA; Tarasik, MI;
PUBLISHED: 1994, SOURCE: Journal of Applied Spectroscopy, VOLUME: 61, ISSUE: 3-4
193
TITLE: The influence of isochronous annealing upon the near-band-edge photoluminescence spectra of the electron-irradiated n-InP
AUTHORS: Radautsan S.I.; Tiginyanu I.M.; Ursaki V.V.; Korshunov F.P.; Sobolev N.A.; Kudryavtseva E.A.;
PUBLISHED: 1993, SOURCE: Solid State Communications, VOLUME: 85, ISSUE: 6
AUTHORS: Radautsan S.I.; Tiginyanu I.M.; Ursaki V.V.; Korshunov F.P.; Sobolev N.A.; Kudryavtseva E.A.;
PUBLISHED: 1993, SOURCE: Solid State Communications, VOLUME: 85, ISSUE: 6
194
TITLE: Defect- Impurity Interaction in Irradiated n-GaAs
AUTHORS: Kdrshunov, FP; Prokhorenkd, TA; Sobolev, NA; Mjdriavtseva, EA;
PUBLISHED: 1992, SOURCE: MRS Proceedings, VOLUME: 262
AUTHORS: Kdrshunov, FP; Prokhorenkd, TA; Sobolev, NA; Mjdriavtseva, EA;
PUBLISHED: 1992, SOURCE: MRS Proceedings, VOLUME: 262
195
TITLE: Rapid Thermal Annealing of Neutron Transmutation Toped Czochralski Silicon
AUTHORS: Berezina, GM; Kdrshunov, FP; Sobolev, NA; Voevodova, AV; Stuk, AA;
PUBLISHED: 1992, SOURCE: MRS Proceedings, VOLUME: 262
AUTHORS: Berezina, GM; Kdrshunov, FP; Sobolev, NA; Voevodova, AV; Stuk, AA;
PUBLISHED: 1992, SOURCE: MRS Proceedings, VOLUME: 262
196
TITLE: Luminescence studies of electron‐irradiated CuInS<inf>2</inf>
AUTHORS: Aksenov I.A.; Sobolev N.A.; Sheraukhov V.A.;
PUBLISHED: 1991, SOURCE: physica status solidi (a), VOLUME: 123, ISSUE: 2
AUTHORS: Aksenov I.A.; Sobolev N.A.; Sheraukhov V.A.;
PUBLISHED: 1991, SOURCE: physica status solidi (a), VOLUME: 123, ISSUE: 2
197
TITLE: Near-edge luminescence of irradiated silicon. The effect of the form of irradiation and of the annealing temperature
AUTHORS: Korshunov, FP; Sobolev, NA; Sheraukhov, VA;
PUBLISHED: 1989, SOURCE: Journal of Applied Spectroscopy, VOLUME: 51, ISSUE: 2
AUTHORS: Korshunov, FP; Sobolev, NA; Sheraukhov, VA;
PUBLISHED: 1989, SOURCE: Journal of Applied Spectroscopy, VOLUME: 51, ISSUE: 2
198
TITLE: Investigations of Radiation Damage Production in Ion Implanated Silicon
AUTHORS: Glaser E.; Götz G.; Sobolev N.; Wesch W.;
PUBLISHED: 1982, SOURCE: physica status solidi (a), VOLUME: 69, ISSUE: 2
AUTHORS: Glaser E.; Götz G.; Sobolev N.; Wesch W.;
PUBLISHED: 1982, SOURCE: physica status solidi (a), VOLUME: 69, ISSUE: 2
199
TITLE: EPR STUDIES OF POINT DEFECT AND AMORPHOUS PHASE PRODUCTION DURING ION IMPLANTATION IN SILICON.
AUTHORS: Sobolev N.A.; Goetz G.; Karthe W.; Schnabel B.;
PUBLISHED: 1979, SOURCE: Radiation effects, VOLUME: 42, ISSUE: 1-2
AUTHORS: Sobolev N.A.; Goetz G.; Karthe W.; Schnabel B.;
PUBLISHED: 1979, SOURCE: Radiation effects, VOLUME: 42, ISSUE: 1-2
INDEXED IN: 
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ORCID
ORCID200
TITLE: ESR line share study of amorphous centres in ion implanted silicon
AUTHORS: Götz, G; Karthe, W; Schnabel, B; Sobolev, N;
PUBLISHED: 1978, SOURCE: Physica Status Solidi (a), VOLUME: 50, ISSUE: 2
AUTHORS: Götz, G; Karthe, W; Schnabel, B; Sobolev, N;
PUBLISHED: 1978, SOURCE: Physica Status Solidi (a), VOLUME: 50, ISSUE: 2
