Reinhard Horst Schwarz
AuthID: R-000-F9H
81
TITLE: Photoluminescence quenching by electric fields in hydrogenated amorphous silicon Full Text
AUTHORS: Muschik, T; Schwarz, R; Curtins, H; Favre, M;
PUBLISHED: 1988, SOURCE: Twentieth IEEE Photovoltaic Specialists Conference - 1988 in Conference Record of the IEEE Photovoltaic Specialists Conference, VOLUME: 1
AUTHORS: Muschik, T; Schwarz, R; Curtins, H; Favre, M;
PUBLISHED: 1988, SOURCE: Twentieth IEEE Photovoltaic Specialists Conference - 1988 in Conference Record of the IEEE Photovoltaic Specialists Conference, VOLUME: 1
INDEXED IN: 
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ORCID
ORCID82
TITLE: Optical and electronic properties of an amorphous silicon-germanium alloy with a 1.28 eV optical gap Full Text
AUTHORS: Kolodzey, J; Schwarz, R; Aljishi, S; Chu, V; Shen, DS; Fauchet, PM; Wagner, S;
PUBLISHED: 1988, SOURCE: Applied Physics Letters, VOLUME: 52, ISSUE: 6
AUTHORS: Kolodzey, J; Schwarz, R; Aljishi, S; Chu, V; Shen, DS; Fauchet, PM; Wagner, S;
PUBLISHED: 1988, SOURCE: Applied Physics Letters, VOLUME: 52, ISSUE: 6
83
TITLE: Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films Full Text
AUTHORS: Schwarz, R; Kolodzey, JS; Wagner, S; Kouzes, RT;
PUBLISHED: 1987, SOURCE: Applied Physics Letters, VOLUME: 50, ISSUE: 4
AUTHORS: Schwarz, R; Kolodzey, JS; Wagner, S; Kouzes, RT;
PUBLISHED: 1987, SOURCE: Applied Physics Letters, VOLUME: 50, ISSUE: 4
84
TITLE: Reply to the comment by S. Dannefaer et al. on the paper of H. E. Schaefer et al. on "amorphous hydrogenated silicon studied by positron lifetime spectroscopy"
AUTHORS: Schaefer, HE; Wurschum, R; Schwarz, R; Slobodin, D; Wagner, S;
PUBLISHED: 1987, SOURCE: Applied Physics A Solids and Surfaces, VOLUME: 43, ISSUE: 4
AUTHORS: Schaefer, HE; Wurschum, R; Schwarz, R; Slobodin, D; Wagner, S;
PUBLISHED: 1987, SOURCE: Applied Physics A Solids and Surfaces, VOLUME: 43, ISSUE: 4
85
TITLE: Measurement of surface photovoltage in high-rate deposited a-Si:H films and comparison with photothermal deflection spectroscopy and conductivity data Full Text
AUTHORS: Schwarz, R; Goedecker, S; Muschik, T; Wyrsch, N; Shah, AV; Curtins, H;
PUBLISHED: 1987, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 97-98, ISSUE: PART 1
AUTHORS: Schwarz, R; Goedecker, S; Muschik, T; Wyrsch, N; Shah, AV; Curtins, H;
PUBLISHED: 1987, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 97-98, ISSUE: PART 1
INDEXED IN: Scopus
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ORCID86
TITLE: Amorphous hydrogenated silicon studied by positron lifetime spectroscopy
AUTHORS: Schaefer, HE; Wurschum, R; Schwarz, R; Slobodin, D; Wagner, S;
PUBLISHED: 1986, SOURCE: Applied Physics A Solids and Surfaces, VOLUME: 40, ISSUE: 3
AUTHORS: Schaefer, HE; Wurschum, R; Schwarz, R; Slobodin, D; Wagner, S;
PUBLISHED: 1986, SOURCE: Applied Physics A Solids and Surfaces, VOLUME: 40, ISSUE: 3
87
TITLE: Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys Full Text
AUTHORS: Kolodzey, J; Schwarz, R; Aljishi, S; Shen, DS; Campbell, I; Fauchet, PM; Lyon, SA; Wagner, S;
PUBLISHED: 1986, SOURCE: Superlattices and Microstructures, VOLUME: 2, ISSUE: 4
AUTHORS: Kolodzey, J; Schwarz, R; Aljishi, S; Shen, DS; Campbell, I; Fauchet, PM; Lyon, SA; Wagner, S;
PUBLISHED: 1986, SOURCE: Superlattices and Microstructures, VOLUME: 2, ISSUE: 4
INDEXED IN: Scopus
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ORCID88
TITLE: INFRARED SPECTROSCOPY OF DEUTERATED a-Si,Ge:D,F ALLOYS PREPARED BY DC GLOW DISCHARGE DEPOSITION.
AUTHORS: Okada, Y; Slobodin, D; Chou, SF; Schwarz, R; Wagner, S;
PUBLISHED: 1986, SOURCE: Materials Issues in Amorphous Semiconductor Technology. in Materials Research Society Symposia Proceedings, VOLUME: 70
AUTHORS: Okada, Y; Slobodin, D; Chou, SF; Schwarz, R; Wagner, S;
PUBLISHED: 1986, SOURCE: Materials Issues in Amorphous Semiconductor Technology. in Materials Research Society Symposia Proceedings, VOLUME: 70
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ORCID89
TITLE: MEASUREMENTS OF LIGHT-INDUCED DEGRADATION IN a-Si,Ge:H,F ALLOYS.
AUTHORS: Kolodzey, J; Aljishi, S; Smith, ZE; Chu, V; Schwarz, R; Wagner, S;
PUBLISHED: 1986, SOURCE: Materials Issues in Amorphous Semiconductor Technology. in Materials Research Society Symposia Proceedings, VOLUME: 70
AUTHORS: Kolodzey, J; Aljishi, S; Smith, ZE; Chu, V; Schwarz, R; Wagner, S;
PUBLISHED: 1986, SOURCE: Materials Issues in Amorphous Semiconductor Technology. in Materials Research Society Symposia Proceedings, VOLUME: 70
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ORCID90
TITLE: ELECTRON AND HOLE TRANSPORT PERPENDICULAR TO THE PLANES OF a-Si:H/a-Si,Ge:H COMPOSITIONAL SUPERLATTICES.
AUTHORS: Kolodzey, J; Aljishi, S; Schwarz, R; Shen, DS; Quinlan, S; Lyon, SA; Wagner, S;
PUBLISHED: 1986, SOURCE: Materials Issues in Amorphous Semiconductor Technology. in Materials Research Society Symposia Proceedings, VOLUME: 70
AUTHORS: Kolodzey, J; Aljishi, S; Schwarz, R; Shen, DS; Quinlan, S; Lyon, SA; Wagner, S;
PUBLISHED: 1986, SOURCE: Materials Issues in Amorphous Semiconductor Technology. in Materials Research Society Symposia Proceedings, VOLUME: 70
INDEXED IN: Scopus
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