201
TITLE: Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress  Full Text
AUTHORS: Jong Woo Jin; Arokia Nathan; Pedro Barquinha; Luis Pereira; Elvira Fortunato; Rodrigo Martins; Brian Cobb;
PUBLISHED: 2016, SOURCE: AIP ADVANCES, VOLUME: 6, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef
202
TITLE: Transistors: Solid State Electrochemical WO3 Transistors with High Current Modulation (Adv. Electron. Mater. 9/2016)
AUTHORS: Grey, P; Pereira, L; Pereira, S; Barquinha, P; Cunha, I; Martins, R; Fortunato, E;
PUBLISHED: 2016, SOURCE: Advanced Electronic Materials, VOLUME: 2, ISSUE: 9
INDEXED IN: Scopus CrossRef
IN MY: ORCID
203
TITLE: Solid State Electrochemical WO3 Transistors with High Current Modulation
AUTHORS: Paul Grey; Luis Pereira; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
204
TITLE: Solution-Processed Alkaline Lithium Oxide Dielectrics for Applications in n- and p-Type Thin-Film Transistors
AUTHORS: Liu, A; Liu, GX; Zhu, CD; Zhu, HH; Fortunato, E; Martins, R; Shan, FK;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 47
IN MY: ORCID
205
TITLE: High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric  Full Text
AUTHORS: Shan, FK; Liu, A; Zhu, HH; Kong, WJ; Liu, JQ; Shin, BC; Fortunato, E; Martins, R; Liu, GX;
PUBLISHED: 2016, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 4, ISSUE: 40
INDEXED IN: Scopus WOS CrossRef: 84
IN MY: ORCID
206
TITLE: The 2016 oxide electronic materials and oxide interfaces roadmap  Full Text
AUTHORS: Lorenz, M; Rao, MSR; Venkatesan, T; Fortunato, E; Barquinha, P; Branquinho, R; Salgueiro, D; Martins, R; Carlos, E; Liu, A; Shan, FK; Grundmann, M; Boschker, H; Mukherjee, J; Priyadarshini, M; DasGupta, N; Rogers, DJ; Teherani, FH; Sandana, EV; Bove, P; Rietwyk, K; Zaban, A; Veziridis, A; Weidenkaff, A; Muralidhar, M; Murakami, M; Abel, S; Fompeyrine, J; Zuniga Perez, J; Ramesh, R; Spaldin, NA; Ostanin, S; Borisov, V; Mertig, I; Lazenka, V; Srinivasan, G; Prellier, W; Uchida, M; Kawasaki, M; Pentcheva, R; Gegenwart, P; Granozio, FM; Fontcuberta, J; Pryds, N; ...More
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 43
INDEXED IN: Scopus WOS CrossRef: 268
IN MY: ORCID
207
TITLE: A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors  Full Text
AUTHORS: Moldovan, O; Castro Carranza, A; Cerdeira, A; Estrada, M; Barquinha, P; Martins, R; Fortunato, E; Miljakovic, S; Iniguez, B;
PUBLISHED: 2016, SOURCE: SOLID-STATE ELECTRONICS, VOLUME: 126
INDEXED IN: Scopus WOS CrossRef: 25
IN MY: ORCID
208
TITLE: Photocatalytic behavior of TiO2 films synthesized by microwave irradiation  Full Text
AUTHORS: Nunes, D; Pimentel, A; Pinto, JV; Calmeiro, TR; Nandy, S; Barquinha, P; Pereira, L; Carvalho, PA; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: CATALYSIS TODAY, VOLUME: 278
INDEXED IN: Scopus WOS CrossRef: 38
IN MY: ORCID
209
TITLE: Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors  Full Text
AUTHORS: Jiang, GX; Liu, A; Liu, GX; Zhu, CD; Meng, Y; Shin, B; Fortunato, E; Martins, R; Shan, FK;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 109, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef: 57
IN MY: ORCID
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