201
TITLE: Novel Linear Analog-Adder Using a-IGZO TFTs
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Elvira Fortunato; Rodrigo Martins; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: IEEE International Symposium on Circuits and Systems (ISCAS) in 2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLUME: 2016-July
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
202
TITLE: Basic Analog and Digital Circuits with a-IGZO TFTs
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Tavares ; Pedro Barquinha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) in 2016 13TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN (SMACD)
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
204
TITLE: Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress  Full Text
AUTHORS: Jong Woo Jin; Arokia Nathan; Pedro Barquinha; Luis Pereira; Elvira Fortunato; Rodrigo Martins; Brian Cobb;
PUBLISHED: 2016, SOURCE: AIP ADVANCES, VOLUME: 6, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef
205
TITLE: Transistors: Solid State Electrochemical WO3 Transistors with High Current Modulation (Adv. Electron. Mater. 9/2016)
AUTHORS: Grey, P; Pereira, L; Pereira, S; Barquinha, P; Cunha, I; Martins, R; Fortunato, E;
PUBLISHED: 2016, SOURCE: Advanced Electronic Materials, VOLUME: 2, ISSUE: 9
INDEXED IN: Scopus CrossRef
IN MY: ORCID
206
TITLE: Solid State Electrochemical WO3 Transistors with High Current Modulation
AUTHORS: Paul Grey; Luis Pereira; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
207
TITLE: Solution-Processed Alkaline Lithium Oxide Dielectrics for Applications in n- and p-Type Thin-Film Transistors
AUTHORS: Liu, A; Liu, GX; Zhu, CD; Zhu, HH; Fortunato, E; Martins, R; Shan, FK;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 47
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208
TITLE: High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric  Full Text
AUTHORS: Shan, FK; Liu, A; Zhu, HH; Kong, WJ; Liu, JQ; Shin, BC; Fortunato, E; Martins, R; Liu, GX;
PUBLISHED: 2016, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 4, ISSUE: 40
INDEXED IN: Scopus WOS CrossRef: 84
IN MY: ORCID
209
TITLE: The 2016 oxide electronic materials and oxide interfaces roadmap  Full Text
AUTHORS: Lorenz, M; Rao, MSR; Venkatesan, T; Fortunato, E; Barquinha, P; Branquinho, R; Salgueiro, D; Martins, R; Carlos, E; Liu, A; Shan, FK; Grundmann, M; Boschker, H; Mukherjee, J; Priyadarshini, M; DasGupta, N; Rogers, DJ; Teherani, FH; Sandana, EV; Bove, P; Rietwyk, K; Zaban, A; Veziridis, A; Weidenkaff, A; Muralidhar, M; Murakami, M; Abel, S; Fompeyrine, J; Zuniga Perez, J; Ramesh, R; Spaldin, NA; Ostanin, S; Borisov, V; Mertig, I; Lazenka, V; Srinivasan, G; Prellier, W; Uchida, M; Kawasaki, M; Pentcheva, R; Gegenwart, P; Granozio, FM; Fontcuberta, J; Pryds, N; ...More
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 43
INDEXED IN: Scopus WOS CrossRef: 268
IN MY: ORCID
210
TITLE: A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors  Full Text
AUTHORS: Moldovan, O; Castro Carranza, A; Cerdeira, A; Estrada, M; Barquinha, P; Martins, R; Fortunato, E; Miljakovic, S; Iniguez, B;
PUBLISHED: 2016, SOURCE: SOLID-STATE ELECTRONICS, VOLUME: 126
INDEXED IN: Scopus WOS CrossRef: 25
IN MY: ORCID
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