341
TITLE: 3 dimensional polymorphous silicon based metal-insulator-semiconductor position sensitive detectors  Full Text
AUTHORS: Águas, H; Pereira, S; Costa, D; Barquinha, P; Pereira, L; Fortunato, E; Martins, R;
PUBLISHED: 2007, SOURCE: Thin Solid Films, VOLUME: 515, ISSUE: 19
INDEXED IN: CrossRef
IN MY: ORCID
342
TITLE: Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films  Full Text
AUTHORS: Gonçalves, G; Elangovan, E; Barquinha, P; Pereira, L; Martins, R; Fortunato, E;
PUBLISHED: 2007, SOURCE: Thin Solid Films, VOLUME: 515, ISSUE: 24
INDEXED IN: CrossRef
IN MY: ORCID
344
TITLE: UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers  Full Text
AUTHORS: Pastor, D; Hernandez, S; Cusco, R; Artus, L; Martin, RW; O'Donnell, KP; Briot, O; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef
345
TITLE: Blue cathodoluminescence from thulium implanted AlxGa1-xN and InxAl1-xN  Full Text
AUTHORS: Roqan, IS; Lorenz, K ; O'Donnell, KP; Trager Cowan, C; Martin, RW; Watson, IM; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef
346
TITLE: Local structure of luminescent InGaN alloys  Full Text
AUTHORS: Kachkanov, V; O'Donnell, KP; Martin, RW; Mosselmans, JFW; Pereira, S ;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 89, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef
347
TITLE: High temperature annealing of rare earth implanted GaN films: Structural and optical properties  Full Text
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Wojdak, M; Braud, A; Monteiro, T ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7
INDEXED IN: Scopus WOS CrossRef: 39
348
TITLE: Optical properties of high-temperature annealed Eu-implanted GaN  Full Text
AUTHORS: Wang, K; Martin, RW; Nogales, E; Katchkanov, V; O'Donnell, KP; Hernandez, S; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7
INDEXED IN: Scopus WOS CrossRef
349
TITLE: Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing  Full Text
AUTHORS: Nogales, E; Martin, RW; O'Donnell, KP; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
350
TITLE: Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence  Full Text
AUTHORS: Martin, RW; Rading, D; Kersting, R; Tallarek, E; Nogales, E; Amabile, D; Wang, K; Katchkanov, V; Trager Cowan, C; O'Donnell, KP; Watson, IM; Matias, V; Vantomme, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, VOLUME: 3, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
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