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Identified 467

441

TITLE: <title>Temperature and light-induced degradation effect on a-Si:H photovoltaic PIN device properties</title>
AUTHORS: Manuela Vieira; Elvira Fortunato; Carlos N Carvalho; Guilherme Lavareda; Fernando Soares; Rodrigo Martins;
PUBLISHED: 1993, SOURCE: Physical Concepts and Materials for Novel Optoelectronic Device Applications II

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442

TITLE: <title>Performances presented by a position-sensitive detector based on amorphous silicon technology</title>
AUTHORS: Elvira Fortunato; Manuela Vieira; Carlos N Carvalho; Guilherme Lavareda; Rodrigo Martins; Fernando Soares; Luis A A Ferreira;
PUBLISHED: 1993, SOURCE: Physical Concepts and Materials for Novel Optoelectronic Device Applications II

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443

TITLE: Role of Photodegradation on the \x03C4;Product and Microstructure of the a-Si:H Pin Devices
AUTHORS: Vieira, M; Fortunato, E; Lavareda, G; C.N Carvalho; Martins, R;
PUBLISHED: 1993, SOURCE: MRS Proc. - MRS Proceedings, VOLUME: 297

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444

TITLE: Large Area Position Sensitive Detector Based on Amorphous Silicon Technology
AUTHORS: Fortunato, E; Vieira, M; Ferreira, L; C.N Carvalho; Lavareda, G; Martins, R;
PUBLISHED: 1993, SOURCE: MRS Proc. - MRS Proceedings, VOLUME: 297

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445

TITLE: A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface Full Text
AUTHORS: J.M.M de Nijs; Carvalho, C; Santos, M; Martins, R;
PUBLISHED: 1991, SOURCE: Applied Surface Science, VOLUME: 52, ISSUE: 4

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446

TITLE: A-Si:H ambipolar diffusion length and effective lifetime measured by flying spot (FST) and spectral photovoltage (SPT) techniques Full Text
AUTHORS: Vieira, M; Martins, R; Fortunato, E; Soares, F; Guimarães, L;
PUBLISHED: 1991, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 137-138

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447

TITLE: Engineering of plasma deposition systems used for producing large area a-Si:H devices Full Text
AUTHORS: Martins, R; Ferreira, I; Carvalho, N; Guimarães, L;
PUBLISHED: 1991, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 137-138

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448

TITLE: On the structural, optical and electronic properties of microcrystalline Si:O:C:H thin films prepared in a two-consecutive-decomposition-deposition-chamber system
AUTHORS: Willeke, G; Martins, R;
PUBLISHED: 1991, SOURCE: Philosophical Magazine Part B, VOLUME: 63, ISSUE: 1

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449

TITLE: ENHANCEMENT OF VOC BY N-TYPE AND P-TYPE MU-C-SI-C-H WIDE BAND-GAP MATERIAL PRODUCED IN A TCDDC SYSTEM
AUTHORS: GUIMARAES, L; SANTOS, M; MACARICO, A; CARVALHO, N; MARTINS, R;
PUBLISHED: 1990, SOURCE: 1989 CONGRESS OF THE INTERNATIONAL SOLAR ENERGY SOC : CLEAN AND SAFE ENERGY FOREVER in CLEAN AND SAFE ENERGY FOREVER, VOLS 1-3

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450

TITLE: A NEW WEAKLY ABSORBING AND HIGHLY CONDUCTIVE (MU-C-SIX-CY-OZ-H) MATERIAL PRODUCED BY A TCDDC SYSTEM
AUTHORS: WILLEKE, G; MARTINS, R; VIEIRA, M; FORTUNATO, E; FERREIRA, I; SANTOS, M; MACARICO, A; CARVALHO, N; GUIMARAES, L;
PUBLISHED: 1990, SOURCE: 1989 CONGRESS OF THE INTERNATIONAL SOLAR ENERGY SOC : CLEAN AND SAFE ENERGY FOREVER in CLEAN AND SAFE ENERGY FOREVER, VOLS 1-3

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Page 45 of 47. Total results: 467.

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