Virginia Chu
AuthID: R-000-HJ2
191
TITLE: Photocurrent collection in a Schottky barrier on an amorphous silicon-germanium alloy structure with 1.23 eV optical gap Full Text
AUTHORS: Chu, V; Conde, JP; Shen, DS; Wagner, S;
PUBLISHED: 1989, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 55, ISSUE: 3
AUTHORS: Chu, V; Conde, JP; Shen, DS; Wagner, S;
PUBLISHED: 1989, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 55, ISSUE: 3
192
TITLE: a-Si:H, to or from a-Si, Ge:H, F graded-bandgap structures
AUTHORS: J.P Conde; Shen, D; Chu, V; Wagner, S;
PUBLISHED: 1989, SOURCE: IEEE Trans. Electron Devices - IEEE Transactions on Electron Devices, VOLUME: 36, ISSUE: 12
AUTHORS: J.P Conde; Shen, D; Chu, V; Wagner, S;
PUBLISHED: 1989, SOURCE: IEEE Trans. Electron Devices - IEEE Transactions on Electron Devices, VOLUME: 36, ISSUE: 12
193
TITLE: Amorphous silicon-germanium alloy multilayers for solar cells Full Text
AUTHORS: Conde, JP ; Chu, V; Tanaka, S; Shen, DS; Wagner, S;
PUBLISHED: 1988, SOURCE: Twentieth IEEE Photovoltaic Specialists Conference - 1988 in Conference Record of the IEEE Photovoltaic Specialists Conference, VOLUME: 1
AUTHORS: Conde, JP ; Chu, V; Tanaka, S; Shen, DS; Wagner, S;
PUBLISHED: 1988, SOURCE: Twentieth IEEE Photovoltaic Specialists Conference - 1988 in Conference Record of the IEEE Photovoltaic Specialists Conference, VOLUME: 1
INDEXED IN: 
Scopus
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ORCID
ORCID194
TITLE: Dangling-bond states in a-Si,Ge:H,F measured by temperature-dependent μτ Full Text
AUTHORS: Shen, DS; Conde, JP ; Chu, V; Liu, JZ; Maruyama, A; Aljishi, S; Smith, ZE; Wagner, S;
PUBLISHED: 1988, SOURCE: Twentieth IEEE Photovoltaic Specialists Conference - 1988 in Conference Record of the IEEE Photovoltaic Specialists Conference, VOLUME: 1
AUTHORS: Shen, DS; Conde, JP ; Chu, V; Liu, JZ; Maruyama, A; Aljishi, S; Smith, ZE; Wagner, S;
PUBLISHED: 1988, SOURCE: Twentieth IEEE Photovoltaic Specialists Conference - 1988 in Conference Record of the IEEE Photovoltaic Specialists Conference, VOLUME: 1
INDEXED IN: Scopus
Scopus IN MY: ORCID
ORCID195
TITLE: DETERMINATION OF THE DO/- LEVEL IN AMORPHOUS SI,GE-H(F) BY TIME-OF-FLIGHT CHARGE COLLECTION Full Text
AUTHORS: SHEN, DS; CONDE, JP ; CHU, V; LIU, JZ; ALJISHI, S; SMITH, ZE; MARUYAMA, A; WAGNER, S;
PUBLISHED: 1988, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 53, ISSUE: 16
AUTHORS: SHEN, DS; CONDE, JP ; CHU, V; LIU, JZ; ALJISHI, S; SMITH, ZE; MARUYAMA, A; WAGNER, S;
PUBLISHED: 1988, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 53, ISSUE: 16
INDEXED IN: Scopus 
WOS
Scopus WOS IN MY: ORCID
ORCID196
TITLE: OPTICAL AND TRANSPORT-PROPERTIES OF A-SI-H,F/A-SI,GE-H,F SUPERLATTICES
AUTHORS: CONDE, JP ; ALJISHI, S; CHU, V; SHEN, DS; WAGNER, S;
PUBLISHED: 1988, SOURCE: SOLAR CELLS, VOLUME: 24, ISSUE: 3-4
AUTHORS: CONDE, JP ; ALJISHI, S; CHU, V; SHEN, DS; WAGNER, S;
PUBLISHED: 1988, SOURCE: SOLAR CELLS, VOLUME: 24, ISSUE: 3-4
INDEXED IN: Scopus WOS
Scopus WOS IN MY: ORCID
ORCID197
TITLE: a-Si:H films deposited at high rates in a 'VHF' silane plasma: Potential for low-cost solar cells Full Text
AUTHORS: Shah, A; Sauvain, E; Wyrsch, N; Curtins, H; Leutz, B; Shen, DS; Chu, V; Wagner, S; Schade, H; Chao, HWA;
PUBLISHED: 1988, SOURCE: Twentieth IEEE Photovoltaic Specialists Conference - 1988 in Conference Record of the IEEE Photovoltaic Specialists Conference, VOLUME: 1
AUTHORS: Shah, A; Sauvain, E; Wyrsch, N; Curtins, H; Leutz, B; Shen, DS; Chu, V; Wagner, S; Schade, H; Chao, HWA;
PUBLISHED: 1988, SOURCE: Twentieth IEEE Photovoltaic Specialists Conference - 1988 in Conference Record of the IEEE Photovoltaic Specialists Conference, VOLUME: 1
INDEXED IN: Scopus
Scopus IN MY: ORCID
ORCID198
TITLE: Optical and electronic properties of an amorphous silicon-germanium alloy with a 1.28 eV optical gap Full Text
AUTHORS: Kolodzey, J; Schwarz, R; Aljishi, S; Chu, V; Shen, DS; Fauchet, PM; Wagner, S;
PUBLISHED: 1988, SOURCE: Applied Physics Letters, VOLUME: 52, ISSUE: 6
AUTHORS: Kolodzey, J; Schwarz, R; Aljishi, S; Chu, V; Shen, DS; Fauchet, PM; Wagner, S;
PUBLISHED: 1988, SOURCE: Applied Physics Letters, VOLUME: 52, ISSUE: 6
199
TITLE: SCHOTTKY-BARRIER FORMATION BETWEEN TRANSITION-METALS AND AMORPHOUS-SILICON GERMANIUM ALLOYS
AUTHORS: CHU, V; HORNG, SF; CONDE, JP; KAHN, A; WAGNER, S;
PUBLISHED: 1988, SOURCE: JOURNAL OF ELECTRONIC MATERIALS, VOLUME: 17, ISSUE: 4
AUTHORS: CHU, V; HORNG, SF; CONDE, JP; KAHN, A; WAGNER, S;
PUBLISHED: 1988, SOURCE: JOURNAL OF ELECTRONIC MATERIALS, VOLUME: 17, ISSUE: 4
INDEXED IN: WOS
WOS200
TITLE: AMORPHOUS SILICON-GERMANIUM ALLOY MULTILAYER STRUCTURES
AUTHORS: CONDE, JP; CHU, V; SHEN, DS; WAGNER, S;
PUBLISHED: 1988, SOURCE: JOURNAL OF ELECTRONIC MATERIALS, VOLUME: 17, ISSUE: 4
AUTHORS: CONDE, JP; CHU, V; SHEN, DS; WAGNER, S;
PUBLISHED: 1988, SOURCE: JOURNAL OF ELECTRONIC MATERIALS, VOLUME: 17, ISSUE: 4
INDEXED IN: WOS
WOS