Pierre Ruterana
AuthID: R-006-JQQ
1
TITLE: Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission Full Text
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2015, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 30, ISSUE: 4
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2015, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 30, ISSUE: 4
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TITLE: Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2013, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS, VOLUME: 52, ISSUE: 11
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2013, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS, VOLUME: 52, ISSUE: 11
3
TITLE: Mechanisms of damage formation in Eu-implanted AlN Full Text
AUTHORS: Leclerc, S; Lacroix, B; Declemy, A; Lorenz, K ; Ruterana, P;
PUBLISHED: 2012, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 112, ISSUE: 7
AUTHORS: Leclerc, S; Lacroix, B; Declemy, A; Lorenz, K ; Ruterana, P;
PUBLISHED: 2012, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 112, ISSUE: 7
4
TITLE: Damage formation in GaN under medium energy range implantation of rare earth ions: A combined TEM, XRD and RBS/C investigation
AUTHORS: Lacroix, B; Leclerc, S; Ruterana, P; Declemy, A; Miranda, SMC; Lorenz, K ; Alves, E ;
PUBLISHED: 2012, SOURCE: 2011 MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1342
AUTHORS: Lacroix, B; Leclerc, S; Ruterana, P; Declemy, A; Miranda, SMC; Lorenz, K ; Alves, E ;
PUBLISHED: 2012, SOURCE: 2011 MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1342
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TITLE: Mechanisms of damage formation in Eu-implanted GaN probed by X-ray diffraction
AUTHORS: Lacroix, B; Leclerc, S; Declemy, A; Lorenz, K ; Alves, E ; Ruterana, P;
PUBLISHED: 2011, SOURCE: EPL, VOLUME: 96, ISSUE: 4
AUTHORS: Lacroix, B; Leclerc, S; Declemy, A; Lorenz, K ; Alves, E ; Ruterana, P;
PUBLISHED: 2011, SOURCE: EPL, VOLUME: 96, ISSUE: 4
6
TITLE: The high sensitivity of InN under rare earth ion implantation at medium range energy Full Text
AUTHORS: Lacroix, B; Chauvat, MP; Ruterana, P; Lorenz, K ; Alves, E ; Syrkin, A;
PUBLISHED: 2011, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 44, ISSUE: 29
AUTHORS: Lacroix, B; Chauvat, MP; Ruterana, P; Lorenz, K ; Alves, E ; Syrkin, A;
PUBLISHED: 2011, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 44, ISSUE: 29
7
TITLE: A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature Full Text
AUTHORS: Ruterana, P; Lacroix, B; Lorenz, K ;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 1
AUTHORS: Ruterana, P; Lacroix, B; Lorenz, K ;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 1
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TITLE: Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers Full Text
AUTHORS: Das, A; Magalhaes, S; Kotsar, Y; Kandaswamy, PK; Gayral, B; Lorenz, K ; Alves, E ; Ruterana, P; Monroy, E;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 18
AUTHORS: Das, A; Magalhaes, S; Kotsar, Y; Kandaswamy, PK; Gayral, B; Lorenz, K ; Alves, E ; Ruterana, P; Monroy, E;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 18
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TITLE: Optical doping and damage formation in AlN by Eu implantation Full Text
AUTHORS: Lorenz, K ; Alves, E ; Gloux, F; Ruterana, P; Peres, M; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 107, ISSUE: 2
AUTHORS: Lorenz, K ; Alves, E ; Gloux, F; Ruterana, P; Peres, M; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 107, ISSUE: 2
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TITLE: RE Implantation and Annealing of III-Nitrides
AUTHORS: Katharina Lorenz ; Eduardo Alves ; Florence Gloux; Pierre Ruterana;
PUBLISHED: 2010, SOURCE: RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS, VOLUME: 124
AUTHORS: Katharina Lorenz ; Eduardo Alves ; Florence Gloux; Pierre Ruterana;
PUBLISHED: 2010, SOURCE: RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS, VOLUME: 124
