Pierre Ruterana
AuthID: R-006-JQQ
21
TITLE: The atomic structure of defects formed during doping of GaN with rare earth ions Full Text
AUTHORS: Wojtowicz, T; Ruterana, P; Lorenz, K ; Wahl, U ; Alves, E ; Ruffenach, S; Halambalakis, G; Briot, O;
PUBLISHED: 2005, SOURCE: Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting in E-MRS 2004 Fall Meeting Symposia C and F, VOLUME: 2, ISSUE: 3
AUTHORS: Wojtowicz, T; Ruterana, P; Lorenz, K ; Wahl, U ; Alves, E ; Ruffenach, S; Halambalakis, G; Briot, O;
PUBLISHED: 2005, SOURCE: Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting in E-MRS 2004 Fall Meeting Symposia C and F, VOLUME: 2, ISSUE: 3
22
TITLE: Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy Full Text
AUTHORS: Colder, A; Marie, P; Wojtowicz, T; Ruterana, P; Eimer, S; Mechin, L; Lorenz, K ; Wahl, U ; Alves, E ; Matias, V; Mamor, M;
PUBLISHED: 2004, SOURCE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, ISSUE: 4-6
AUTHORS: Colder, A; Marie, P; Wojtowicz, T; Ruterana, P; Eimer, S; Mechin, L; Lorenz, K ; Wahl, U ; Alves, E ; Matias, V; Mamor, M;
PUBLISHED: 2004, SOURCE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, ISSUE: 4-6
23
TITLE: Amorphisation of GaN during processing with rare earth ion beams Full Text
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLISHED: 2004, SOURCE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, ISSUE: 4-6
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLISHED: 2004, SOURCE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, ISSUE: 4-6
24
TITLE: Processing of rare earth doped GaN with ion beams
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O; Vantomme, A;
PUBLISHED: 2003, SOURCE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O; Vantomme, A;
PUBLISHED: 2003, SOURCE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
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