Patrick R. Briddon
AuthID: R-006-MRG
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TITLE: Tin-vacancy complex in germanium Full Text
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu. M Pokotilo; Lastovskii, SB; Coutinho, J ; Carvalho, A; Rayson, MJ; Briddon, PR;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 8
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu. M Pokotilo; Lastovskii, SB; Coutinho, J ; Carvalho, A; Rayson, MJ; Briddon, PR;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 8
22
TITLE: Electronic structure of Zn, Cu and Ni impurities in germanium Full Text
AUTHORS: Silva, EL; Coutinho, J ; Carvalho, A; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLISHED: 2011, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 23, ISSUE: 6
AUTHORS: Silva, EL; Coutinho, J ; Carvalho, A; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLISHED: 2011, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 23, ISSUE: 6
23
TITLE: Surface-phosphorus interaction in Si nanocrystals Full Text
AUTHORS: Carvalho, A; Celikkol, B; Coutinho, J ; Briddon, PR;
PUBLISHED: 2011, SOURCE: International Conference on Extended Defects in Semiconductors, EDS 2010 in Journal of Physics: Conference Series, VOLUME: 281, ISSUE: 1
AUTHORS: Carvalho, A; Celikkol, B; Coutinho, J ; Briddon, PR;
PUBLISHED: 2011, SOURCE: International Conference on Extended Defects in Semiconductors, EDS 2010 in Journal of Physics: Conference Series, VOLUME: 281, ISSUE: 1
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TITLE: Radiation-induced defect reactions in tin-doped Ge crystals
AUTHORS: Vladimir P Markevich; Anthony R Peaker; Bruce Hamilton; Valentin V Litvinov; Yurii M Pokotilo; Alla N Petukh; Stanislav B Lastovskii; Jose Coutinho ; Mark J Rayson; Patrick Briddon; Patrick R Briddon;
PUBLISHED: 2011, SOURCE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 178-179
AUTHORS: Vladimir P Markevich; Anthony R Peaker; Bruce Hamilton; Valentin V Litvinov; Yurii M Pokotilo; Alla N Petukh; Stanislav B Lastovskii; Jose Coutinho ; Mark J Rayson; Patrick Briddon; Patrick R Briddon;
PUBLISHED: 2011, SOURCE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 178-179
25
TITLE: Radiation-induced Defect Reactions in Tin-doped Ge Crystals
AUTHORS: Markovich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu M Pokotilo; Petukh, AN; Lastovskii, SB; Coutinho, J; Rayson, MJ; Briddon, PR;
PUBLISHED: 2011, SOURCE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor (GADEST2011) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, VOLUME: 178-179
AUTHORS: Markovich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu M Pokotilo; Petukh, AN; Lastovskii, SB; Coutinho, J; Rayson, MJ; Briddon, PR;
PUBLISHED: 2011, SOURCE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor (GADEST2011) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, VOLUME: 178-179
INDEXED IN: 
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WOS26
TITLE: Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si Full Text
AUTHORS: Coutinho, J ; Castro, F; Torres, VJB ; Carvalho, A; Barroso, M ; Briddon, PR;
PUBLISHED: 2010, SOURCE: Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting in THIN SOLID FILMS, VOLUME: 518, ISSUE: 9
AUTHORS: Coutinho, J ; Castro, F; Torres, VJB ; Carvalho, A; Barroso, M ; Briddon, PR;
PUBLISHED: 2010, SOURCE: Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting in THIN SOLID FILMS, VOLUME: 518, ISSUE: 9
27
TITLE: Ab-initio modeling of a-Si and a-Si:H Full Text
AUTHORS: Ricardo M Ribeiro; Vitor J B Torres; Mikhail I Vasilevskiy; Andre Barros; Patrick R Briddon;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting Symposium A InN Material and Alloys in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 5, VOLUME: 7, ISSUE: 5
AUTHORS: Ricardo M Ribeiro; Vitor J B Torres; Mikhail I Vasilevskiy; Andre Barros; Patrick R Briddon;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting Symposium A InN Material and Alloys in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 5, VOLUME: 7, ISSUE: 5
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TITLE: Trivacancy in silicon: A combined DLTS and ab-initio modeling study Full Text
AUTHORS: Markevich, VP; Peaker, AR; Lastovskii, SB; Murin, LI; Coutinho, J ; Markevich, AV; Torres, VJB ; Briddon, PR; Dobaczewski, L; Monakhov, EV; Svensson, BG;
PUBLISHED: 2009, SOURCE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 23-24
AUTHORS: Markevich, VP; Peaker, AR; Lastovskii, SB; Murin, LI; Coutinho, J ; Markevich, AV; Torres, VJB ; Briddon, PR; Dobaczewski, L; Monakhov, EV; Svensson, BG;
PUBLISHED: 2009, SOURCE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 23-24
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TITLE: Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling
AUTHORS: Markevich, VP; Peaker, AR; Lastovskii, SB; Murin, LI; Coutinho, J ; Torres, VJB ; Briddon, PR; Dobaczewski, L; Monakhov, EV; Svensson, BG;
PUBLISHED: 2009, SOURCE: PHYSICAL REVIEW B, VOLUME: 80, ISSUE: 23
AUTHORS: Markevich, VP; Peaker, AR; Lastovskii, SB; Murin, LI; Coutinho, J ; Torres, VJB ; Briddon, PR; Dobaczewski, L; Monakhov, EV; Svensson, BG;
PUBLISHED: 2009, SOURCE: PHYSICAL REVIEW B, VOLUME: 80, ISSUE: 23
30
TITLE: Strained graphene: tight-binding and density functional calculations Full Text
AUTHORS: Ribeiro, RM ; Vitor M Pereira ; Peres, NMR ; Briddon, PR; Castro Neto, AH;
PUBLISHED: 2009, SOURCE: NEW JOURNAL OF PHYSICS, VOLUME: 11, ISSUE: 11
AUTHORS: Ribeiro, RM ; Vitor M Pereira ; Peres, NMR ; Briddon, PR; Castro Neto, AH;
PUBLISHED: 2009, SOURCE: NEW JOURNAL OF PHYSICS, VOLUME: 11, ISSUE: 11
