Radheshyam Rai
AuthID: R-000-NEM
141
TITLE: Structural and electrical properties of magnesium tellurite ceramics Full Text
AUTHORS: Rai, RS; Sharma, S; Choudhary, RNP;
PUBLISHED: 2002, SOURCE: Ferroelectrics, VOLUME: 275, ISSUE: 1
AUTHORS: Rai, RS; Sharma, S; Choudhary, RNP;
PUBLISHED: 2002, SOURCE: Ferroelectrics, VOLUME: 275, ISSUE: 1
142
TITLE: Malignant Leydig cell tumour of the testis
AUTHORS: Powari, M; Kakkar, N; Singh, SK; Rai, RS; Jogai, S;
PUBLISHED: 2002, SOURCE: UROLOGIA INTERNATIONALIS, VOLUME: 68, ISSUE: 1
AUTHORS: Powari, M; Kakkar, N; Singh, SK; Rai, RS; Jogai, S;
PUBLISHED: 2002, SOURCE: UROLOGIA INTERNATIONALIS, VOLUME: 68, ISSUE: 1
143
TITLE: Evaluation of candidate metals for dual-metal gate CMOS with HfO<sub>2</sub> gate dielectric
AUTHORS: Samavedam, SB; Schaeffer, JK; Gilmer, DC; Dhandapani, V; Tobin, PJ; Mogab, J; Nguyen, BY; Dakshina Murthy, S; Rai, RS; Jiang, ZX; Martin, R; Raymond, MV; Zavala, M; La, LB; Smith, JA; Gregory, RB;
PUBLISHED: 2002, SOURCE: SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY, VOLUME: 716
AUTHORS: Samavedam, SB; Schaeffer, JK; Gilmer, DC; Dhandapani, V; Tobin, PJ; Mogab, J; Nguyen, BY; Dakshina Murthy, S; Rai, RS; Jiang, ZX; Martin, R; Raymond, MV; Zavala, M; La, LB; Smith, JA; Gregory, RB;
PUBLISHED: 2002, SOURCE: SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY, VOLUME: 716
INDEXED IN: 
WOS
WOS IN MY: 
ORCID
ORCID144
TITLE: Theoretical and experimental investigation of thermal stability of HfO<sub>2</sub>/Si and HfO<sub>2</sub>/SiO<sub>2</sub> interfaces
AUTHORS: Liu, CL; Stoker, M; Hegde, RI; Rai, RS; Tobin, PJ;
PUBLISHED: 2002, SOURCE: MODELING AND NUMERICAL SIMULATION OF MATERIALS BEHAVIOR AND EVOLUTION, VOLUME: 731
AUTHORS: Liu, CL; Stoker, M; Hegde, RI; Rai, RS; Tobin, PJ;
PUBLISHED: 2002, SOURCE: MODELING AND NUMERICAL SIMULATION OF MATERIALS BEHAVIOR AND EVOLUTION, VOLUME: 731
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID145
TITLE: Growth and characterization of K<sub>2</sub>Cr<sub>2</sub>O<sub>7</sub> doped PbI<sub>2</sub> single crystal
AUTHORS: Kumar, S; Momeen; Khan, MY; Rai, R;
PUBLISHED: 2002, SOURCE: PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, VOLUME: 4746
AUTHORS: Kumar, S; Momeen; Khan, MY; Rai, R;
PUBLISHED: 2002, SOURCE: PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, VOLUME: 4746
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID146
TITLE: Thermodynamic stability of high-<i>K</i> dielectric metal oxides ZrO<sub>2</sub> and HfO<sub>2</sub> in contact with Si and SiO<sub>2</sub>
AUTHORS: Gutowski, M; Jaffe, JE; Liu, CL; Stoker, M; Hegde, RI; Rai, RS; Tobin, PJ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 11
AUTHORS: Gutowski, M; Jaffe, JE; Liu, CL; Stoker, M; Hegde, RI; Rai, RS; Tobin, PJ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 11
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID147
TITLE: Theoretical and experimental investigation of boron diffusion in polycrystalline HfO<sub>2</sub> films
AUTHORS: Liu, CL; Jiang, ZX; Hegde, RI; Sieloff, DD; Rai, RS; Gilmer, DC; Hobbs, CC; Tobin, PJ; Lu, SF;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 8
AUTHORS: Liu, CL; Jiang, ZX; Hegde, RI; Sieloff, DD; Rai, RS; Gilmer, DC; Hobbs, CC; Tobin, PJ; Lu, SF;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 8
148
TITLE: Study of phase transition and equation of state for rubidium halides
AUTHORS: Singh, S; Singh, RK; Rai, R; Singh, BP;
PUBLISHED: 1999, SOURCE: JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, VOLUME: 68, ISSUE: 4
AUTHORS: Singh, S; Singh, RK; Rai, R; Singh, BP;
PUBLISHED: 1999, SOURCE: JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, VOLUME: 68, ISSUE: 4
149
TITLE: Surface and interface roughness of ultrathin nitric oxide oxynitride gate dielectric
AUTHORS: Hegde, RI; Maiti, B; Rai, RS; Reid, KG; Tobin, PJ;
PUBLISHED: 1998, SOURCE: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, VOLUME: 145, ISSUE: 1
AUTHORS: Hegde, RI; Maiti, B; Rai, RS; Reid, KG; Tobin, PJ;
PUBLISHED: 1998, SOURCE: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, VOLUME: 145, ISSUE: 1
150
TITLE: Specific site cross-sectional sample preparation using focused ion beam for transmission electron microscopy
AUTHORS: Schraub, DM; Rai, RS;
PUBLISHED: 1998, SOURCE: PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, VOLUME: 36, ISSUE: 1-2
AUTHORS: Schraub, DM; Rai, RS;
PUBLISHED: 1998, SOURCE: PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, VOLUME: 36, ISSUE: 1-2
