Radheshyam Rai
AuthID: R-000-NEM
171
TITLE: AN INTEGRATED APPROACH FOR UTILIZATION OF OVERBURDEN FOR STOWING IN THICK SEAMS EXTRACTION AND BACK FILLING IN EXHAUSTED QUARRIES
AUTHORS: RAI, RS;
PUBLISHED: 1993, SOURCE: THICK SEAM MINING
AUTHORS: RAI, RS;
PUBLISHED: 1993, SOURCE: THICK SEAM MINING
INDEXED IN: 
WOS
WOS IN MY: 
ORCID
ORCID172
TITLE: EXPERIENCE WITH SIMULTANEOUS 3 LIFT LONGWALL EXTRACTION OF 9 M. THICK LOW STRENGTH COAL SEAM AT 450 M. DEPTH AT JITPUR-COLLIERY
AUTHORS: RAI, RS;
PUBLISHED: 1993, SOURCE: THICK SEAM MINING
AUTHORS: RAI, RS;
PUBLISHED: 1993, SOURCE: THICK SEAM MINING
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID173
TITLE: CVD AND CHARACTERIZATION OF AL-CU METALLIZATION THIN-FILMS
AUTHORS: HOULDING, VH; MAXWELL, H; CROCHIERE, SM; FARRINGTON, DL; RAI, RS; TARTAGLIA, JM;
PUBLISHED: 1992, SOURCE: ADVANCED METALLIZATION AND PROCESSING FOR SEMICONDUCTOR DEVICES AND CIRCUITS - II, VOLUME: 260
AUTHORS: HOULDING, VH; MAXWELL, H; CROCHIERE, SM; FARRINGTON, DL; RAI, RS; TARTAGLIA, JM;
PUBLISHED: 1992, SOURCE: ADVANCED METALLIZATION AND PROCESSING FOR SEMICONDUCTOR DEVICES AND CIRCUITS - II, VOLUME: 260
174
TITLE: CHARACTERIZATION OF VERTICAL-CAVITY SEMICONDUCTOR STRUCTURES
AUTHORS: CHRISTENSEN, DH; PELLEGRINO, JG; HICKERNELL, RK; CROCHIERE, SM; PARSONS, CA; RAI, RS;
PUBLISHED: 1992, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 72, ISSUE: 12
AUTHORS: CHRISTENSEN, DH; PELLEGRINO, JG; HICKERNELL, RK; CROCHIERE, SM; PARSONS, CA; RAI, RS;
PUBLISHED: 1992, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 72, ISSUE: 12
175
TITLE: CHARACTERIZATION OF CDTE, (CD,ZN)TE, AND CD(TE,SE)SINGLE CRYSTALS BY TRANSMISSION ELECTRON-MICROSCOPY
AUTHORS: RAI, RS; MAHAJAN, S; MCDEVITT, S; JOHNSON, CJ;
PUBLISHED: 1991, SOURCE: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, VOLUME: 9, ISSUE: 3
AUTHORS: RAI, RS; MAHAJAN, S; MCDEVITT, S; JOHNSON, CJ;
PUBLISHED: 1991, SOURCE: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, VOLUME: 9, ISSUE: 3
176
TITLE: INTERLAYER COUPLING IN PEROXITONIC MODEL OF SUPERCONDUCTIVITY
AUTHORS: RAI, R;
PUBLISHED: 1991, SOURCE: BULLETIN OF MATERIALS SCIENCE, VOLUME: 14, ISSUE: 4
AUTHORS: RAI, R;
PUBLISHED: 1991, SOURCE: BULLETIN OF MATERIALS SCIENCE, VOLUME: 14, ISSUE: 4
177
TITLE: DEFORMATION-BEHAVIOR OF CDTE AND (CD,ZN)TE SINGLE-CRYSTALS BETWEEN 200-DEGREES-C AND 600-DEGREES-C
AUTHORS: RAI, RS; MAHAJAN, S; MICHEL, DJ; SMITH, HH; MCDEVITT, S; JOHNSON, CJ;
PUBLISHED: 1991, SOURCE: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 10, ISSUE: 3
AUTHORS: RAI, RS; MAHAJAN, S; MICHEL, DJ; SMITH, HH; MCDEVITT, S; JOHNSON, CJ;
PUBLISHED: 1991, SOURCE: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 10, ISSUE: 3
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID178
TITLE: GROWTH AND CHARACTERIZATION OF CDTE AND CDTE ALLOYS
AUTHORS: MCDEVITT, S; JOHN, DR; SEPICH, JL; BOWERS, KA; SCHETZINA, JF; RAI, RS; MAHAJAN, S;
PUBLISHED: 1990, SOURCE: PROPERTIES OF II-VI SEMICONDUCTORS : BULK CRYSTALS, EPITAXIAL FILMS, QUANTUM WELL STRUCTURES, AND DILUTE MAGNETIC SYSTEMS, VOLUME: 161
AUTHORS: MCDEVITT, S; JOHN, DR; SEPICH, JL; BOWERS, KA; SCHETZINA, JF; RAI, RS; MAHAJAN, S;
PUBLISHED: 1990, SOURCE: PROPERTIES OF II-VI SEMICONDUCTORS : BULK CRYSTALS, EPITAXIAL FILMS, QUANTUM WELL STRUCTURES, AND DILUTE MAGNETIC SYSTEMS, VOLUME: 161
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID179
TITLE: FERROELECTRIC DOMAIN-STRUCTURE OF LANTHANUM-MODIFIED LEAD TITANATE CERAMICS
AUTHORS: DEMCZYK, BG; RAI, RS; THOMAS, G;
PUBLISHED: 1990, SOURCE: JOURNAL OF THE AMERICAN CERAMIC SOCIETY, VOLUME: 73, ISSUE: 3
AUTHORS: DEMCZYK, BG; RAI, RS; THOMAS, G;
PUBLISHED: 1990, SOURCE: JOURNAL OF THE AMERICAN CERAMIC SOCIETY, VOLUME: 73, ISSUE: 3
180
TITLE: INFLUENCE OF SOLUTE DOPING ON THE HIGH-TEMPERATURE DEFORMATION-BEHAVIOR OF GAAS
AUTHORS: GURUSWAMY, S; RAI, RS; FABER, KT; HIRTH, JP; CLEMANS, JE; MCGUIGAN, S; THOMAS, RN; MITCHEL, W;
PUBLISHED: 1989, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 65, ISSUE: 6
AUTHORS: GURUSWAMY, S; RAI, RS; FABER, KT; HIRTH, JP; CLEMANS, JE; MCGUIGAN, S; THOMAS, RN; MITCHEL, W;
PUBLISHED: 1989, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 65, ISSUE: 6
