K. G. Mcguigan
AuthID: R-006-PN4
1
TITLE: Radioactive isotope identifications of Au and Pt photoluminescence centres in silicon Full Text
AUTHORS: Henry, MO; Alves, E ; Bollmann, J; Burchard, A; Deicher, M; Fanciulli, M; Forkel Wirth, D; Knopf, MH; Lindner, S; Magerle, R; McGlynn, E; McGuigan, KG; Soares, JC ; Stotzler, A; Weyer, G;
PUBLISHED: 1998, SOURCE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, ISSUE: 2
AUTHORS: Henry, MO; Alves, E ; Bollmann, J; Burchard, A; Deicher, M; Fanciulli, M; Forkel Wirth, D; Knopf, MH; Lindner, S; Magerle, R; McGlynn, E; McGuigan, KG; Soares, JC ; Stotzler, A; Weyer, G;
PUBLISHED: 1998, SOURCE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, ISSUE: 2
2
TITLE: Photoluminescence study of cadmium-related defects in oxygen-rich silicon
AUTHORS: McGlynn, E; Henry, MO; McGuigan, KG; doCarmo, MC;
PUBLISHED: 1996, SOURCE: PHYSICAL REVIEW B, VOLUME: 54, ISSUE: 20
AUTHORS: McGlynn, E; Henry, MO; McGuigan, KG; doCarmo, MC;
PUBLISHED: 1996, SOURCE: PHYSICAL REVIEW B, VOLUME: 54, ISSUE: 20
3
TITLE: A complex luminescent defect in Be-doped oxygen-rich silicon
AUTHORS: Daly, SE; Henry, MO; McGuigan, KG; doCarmo, MC;
PUBLISHED: 1996, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, ISSUE: 7
AUTHORS: Daly, SE; Henry, MO; McGuigan, KG; doCarmo, MC;
PUBLISHED: 1996, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, ISSUE: 7
4
TITLE: A photoluminescence study of a series of closely related axial defects of monoclinic I and rhombic I symmetry in oxygen-rich, zinc-doped silicon
AUTHORS: McGuigan, KG; Henry, MO; Campion, JD; Daly, SE; McGlynn, E; DoCarmo, MC;
PUBLISHED: 1996, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, ISSUE: 6
AUTHORS: McGuigan, KG; Henry, MO; Campion, JD; Daly, SE; McGlynn, E; DoCarmo, MC;
PUBLISHED: 1996, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, ISSUE: 6
5
TITLE: Oxygen complexing with group II impurities in silicon
AUTHORS: Daly, SE; McGlynn, E; Henry, MO; Campion, JD; McGuigan, KG; DoCarmo, MC; Nazare, MH;
PUBLISHED: 1995, SOURCE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-
AUTHORS: Daly, SE; McGlynn, E; Henry, MO; Campion, JD; McGuigan, KG; DoCarmo, MC; Nazare, MH;
PUBLISHED: 1995, SOURCE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-
INDEXED IN: 
WOS
WOS6
TITLE: A PHOTOLUMINESCENCE STUDY OF ZN-O COMPLEXES IN SILICON
AUTHORS: HENRY, MO; CAMPION, JD; MCGUIGAN, KG; LIGHTOWLERS, EC; DOCARMO, MC; NAZARE, MH;
PUBLISHED: 1994, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 9, ISSUE: 7
AUTHORS: HENRY, MO; CAMPION, JD; MCGUIGAN, KG; LIGHTOWLERS, EC; DOCARMO, MC; NAZARE, MH;
PUBLISHED: 1994, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 9, ISSUE: 7
INDEXED IN: WOS
WOS7
TITLE: A PHOTOLUMINESCENCE INVESTIGATION OF LOCAL MODE VIBRATIONS OF THE BERYLLIUM PAIR CENTER IN SILICON
AUTHORS: HENRY, MO; MCGUIGAN, KG; DOCARMO, MC; NAZARE, MH; LIGHTOWLERS, EC;
PUBLISHED: 1990, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 2, ISSUE: 48
AUTHORS: HENRY, MO; MCGUIGAN, KG; DOCARMO, MC; NAZARE, MH; LIGHTOWLERS, EC;
PUBLISHED: 1990, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 2, ISSUE: 48
INDEXED IN: WOS
WOS8
TITLE: UNIAXIAL-STRESS AND ZEEMAN MEASUREMENTS ON THE 943 MEV LUMINESCENCE BAND IN SILICON
AUTHORS: CARMO, MC; MCGUIGAN, KG; HENRY, MO; DAVIES, G; LIGHTOWLERS, EC;
PUBLISHED: 1990, SOURCE: SYMP AT THE 1989 FALL MEETING OF THE MATERIALS RESEARCH SOC : IMPURITIES,DEFECTS, AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES in IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES, VOLUME: 163
AUTHORS: CARMO, MC; MCGUIGAN, KG; HENRY, MO; DAVIES, G; LIGHTOWLERS, EC;
PUBLISHED: 1990, SOURCE: SYMP AT THE 1989 FALL MEETING OF THE MATERIALS RESEARCH SOC : IMPURITIES,DEFECTS, AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES in IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES, VOLUME: 163
INDEXED IN: WOS
WOS9
TITLE: A UNIAXIAL-STRESS STUDY OF A COPPER-RELATED PHOTOLUMINESCENCE BAND IN SILICON Full Text
AUTHORS: MCGUIGAN, KG; HENRY, MO; CARMO, MC; DAVIES, G; LIGHTOWLERS, EC;
PUBLISHED: 1989, SOURCE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, ISSUE: 1-4
AUTHORS: MCGUIGAN, KG; HENRY, MO; CARMO, MC; DAVIES, G; LIGHTOWLERS, EC;
PUBLISHED: 1989, SOURCE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, ISSUE: 1-4
INDEXED IN: 
Scopus WOS
Scopus WOS