T. I. Benushis
AuthID: R-006-VG3
1
TITLE: Complex model for plasma-enhanced heteroepitaxial deposition of A2B6 semiconductor compounds using MOC
AUTHORS: Ershov, SN; Vasilevskiy, MI ; Benushis, TI; Gurllev, BV; Ozerov, AB;
PUBLISHED: 1992, SOURCE: Semiconductor Science and Technology, VOLUME: 7, ISSUE: 2
AUTHORS: Ershov, SN; Vasilevskiy, MI ; Benushis, TI; Gurllev, BV; Ozerov, AB;
PUBLISHED: 1992, SOURCE: Semiconductor Science and Technology, VOLUME: 7, ISSUE: 2
INDEXED IN: Scopus CrossRef