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TITLE: Isotopic fingerprints of Pt-containing luminescence centers in highly enriched Si-28
AUTHORS: Steger, M; Yang, A; Sekiguchi, T; Saeedi, K; Thewalt, MLW; Henry, MO; Johnston, K; Alves, E ; Wahl, U ; Riemann, H; Abrosimov, NV; Churbanov, MF; Gusev, AV; Kaliteevskii, AK; Godisov, ON; Becker, P; J Pohl;
PUBLISHED: 2010, SOURCE: PHYSICAL REVIEW B, VOLUME: 81, ISSUE: 23
INDEXED IN: Scopus WOS CrossRef
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TITLE: Vacancy-dioxygen centers in Si-rich SiGe alloys  Full Text
AUTHORS: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS CrossRef
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TITLE: Structure and properties of vacancy-oxygen complexes in Si1-xGex alloys
AUTHORS: Markevich, VP; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR; Murin, LI; Dobaczewski, L; Abrosimov, NV;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 69, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef: 31
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TITLE: Electronic properties of vacancy-oxygen complexes in SiGe alloys  Full Text
AUTHORS: Markevich, VP; Peaker, AR; Murin, LI; Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR; Auret, FD; Abrosimov, NV;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 2
5
TITLE: The use of the X-ray anomalous transmission effect in the structure investigation of high-temperature superconductors  Full Text
AUTHORS: Bdikin, IK ; Shmyt'ko, IM; Sh S Shekhtman; Abrosimov, NV; Emel'chenko, GA; Yu A Ossipyan;
PUBLISHED: 1992, SOURCE: Physica C: Superconductivity and its applications, VOLUME: 201, ISSUE: 1-2
INDEXED IN: Scopus