Dr. Gali Hema Chandra
AuthID: R-000-VYF
1
TITLE: Influence of Process Parameters on the RF Sputtered GaP Thin Films Full Text
AUTHORS: Mota, DA; Hema Chandra, GH; Ventura, J ; Guedes, A ; Perez de la Cruz, JP ;
PUBLISHED: 2013, SOURCE: JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, VOLUME: 29, ISSUE: 9
AUTHORS: Mota, DA; Hema Chandra, GH; Ventura, J ; Guedes, A ; Perez de la Cruz, JP ;
PUBLISHED: 2013, SOURCE: JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, VOLUME: 29, ISSUE: 9
2
TITLE: Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering Full Text
AUTHORS: Hema H Chandra; Perez de la Cruz, JP ;
PUBLISHED: 2012, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 354, ISSUE: 1
AUTHORS: Hema H Chandra; Perez de la Cruz, JP ;
PUBLISHED: 2012, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 354, ISSUE: 1
3
TITLE: Influence of substrate and selenization temperatures on the growth of Cu2SnSe3 films Full Text
AUTHORS: Hema H Chandra; Lakshmana L Kumar; Prasada P Rao; Uthanna, S;
PUBLISHED: 2011, SOURCE: JOURNAL OF MATERIALS SCIENCE, VOLUME: 46, ISSUE: 21
AUTHORS: Hema H Chandra; Lakshmana L Kumar; Prasada P Rao; Uthanna, S;
PUBLISHED: 2011, SOURCE: JOURNAL OF MATERIALS SCIENCE, VOLUME: 46, ISSUE: 21
4
TITLE: The influence of argon pressure and RF power on the growth of InP thin films Full Text
AUTHORS: Hema H Chandra; Perez de la Cruz, JP ; Ventura, J ;
PUBLISHED: 2011, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 26, ISSUE: 7
AUTHORS: Hema H Chandra; Perez de la Cruz, JP ; Ventura, J ;
PUBLISHED: 2011, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 26, ISSUE: 7
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TITLE: Growth of highly (111) oriented Culn(0.75)Al(0.25)Se(2) thin films Full Text
AUTHORS: Hema H Chandra; Udayakumar, C; Padhy, N; Uthanna, S;
PUBLISHED: 2010, SOURCE: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 13, ISSUE: 4
AUTHORS: Hema H Chandra; Udayakumar, C; Padhy, N; Uthanna, S;
PUBLISHED: 2010, SOURCE: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 13, ISSUE: 4
