121
TITLE: Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content  Full Text
AUTHORS: Fernandez Garrido, S; Pereiro, J; Gonzalez Posada, F; Munoz, E; Calleja, E; Redondo Cubero, A; Gago, R;
PUBLISHED: 2008, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 103, ISSUE: 4
INDEXED IN: WOS
122
TITLE: Study of SiNx : H-y passivant layers for AlGaN/GaN high electron mobility transistors  Full Text
AUTHORS: Redondo Cubero, A; Gago, R; Romero, MF; Jimenez, A; Gonzalez Posada, F; Brana, AF; Munoz, E;
PUBLISHED: 2008, SOURCE: E-MRS 2007 Spring Meeting-Symposium F Novel Gain Materials and Devices Based on III-N-V Compounds in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008, VOLUME: 5, ISSUE: 2
INDEXED IN: WOS
123
TITLE: Rutherford backscattering spectrometry characterization of nanoporous chalcogenide thin films grown at oblique angles  Full Text
AUTHORS: Martin Palma, RJ; Redondo Cubero, A; Gago, R; Ryan, JV; Pantano, CG;
PUBLISHED: 2008, SOURCE: JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY, VOLUME: 23, ISSUE: 7
INDEXED IN: WOS
124
TITLE: Tuning the surface morphology in self-organized ion beam nanopatterning of Si(001) via metal incorporation: from holes to dots  Full Text
AUTHORS: Sanchez Garcia, JA; Vazquez, L; Gago, R; Redondo Cubero, A; Albella, JM; Zs Czigany;
PUBLISHED: 2008, SOURCE: NANOTECHNOLOGY, VOLUME: 19, ISSUE: 35
INDEXED IN: WOS
125
TITLE: Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy  Full Text
AUTHORS: Fernandez Garrido, S; Redondo Cubero, A; Gago, R; Bertram, F; Christen, J; Luna, E; Trampert, A; Pereiro, J; Munoz, E; Calleja, E;
PUBLISHED: 2008, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 104, ISSUE: 8
INDEXED IN: WOS
126
TITLE: Aluminium incorporation in AlxGa1-xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction  Full Text
AUTHORS: Redondo Cubero, A; Gago, R; Gonzalez Posada, F; Kreissig, U; di Forte F Poisson; Brana, AF; Munoz, E;
PUBLISHED: 2008, SOURCE: THIN SOLID FILMS, VOLUME: 516, ISSUE: 23
INDEXED IN: WOS
127
TITLE: Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction  Full Text
AUTHORS: Redondo-Cubero, A; Gago, R; González-Posada, F; Kreissig, U; M.-A di Forte Poisson; A.F Braña; Muñoz, E;
PUBLISHED: 2008, SOURCE: Thin Solid Films, VOLUME: 516, ISSUE: 23
INDEXED IN: CrossRef
IN MY: ORCID
128
TITLE: Rutherford backscattering spectrometry characterization of nanoporous chalcogenide thin films grown at oblique angles  Full Text
AUTHORS: Martín-Palma, RJ; Redondo-Cubero, A; Gago, R; Ryan, JV; Pantano, CG;
PUBLISHED: 2008, SOURCE: Journal of Analytical Atomic Spectrometry - J. Anal. At. Spectrom., VOLUME: 23, ISSUE: 7
INDEXED IN: CrossRef
IN MY: ORCID
129
TITLE: Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content  Full Text
AUTHORS: Fernández-Garrido, S; Pereiro, J; González-Posada, F; Muñoz, E; Calleja, E; Redondo-Cubero, A; Gago, R;
PUBLISHED: 2008, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 103, ISSUE: 4
INDEXED IN: CrossRef
IN MY: ORCID
130
TITLE: Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy  Full Text
AUTHORS: Fernández-Garrido, S; Redondo-Cubero, A; Gago, R; Bertram, F; Christen, J; Luna, E; Trampert, A; Pereiro, J; Muñoz, E; Calleja, E;
PUBLISHED: 2008, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 104, ISSUE: 8
INDEXED IN: CrossRef
IN MY: ORCID
Page 13 of 14. Total results: 137.