Eduardo Jorge da Costa Alves
AuthID: R-000-4EK
361
TITLE: Lattice site location and outdiffusion of mercury implanted in GaAs Full Text
AUTHORS: J.C Soares; A.A Melo; Alves, E; M.F da Silva; W.P Gillin; B.J Sealy;
PUBLISHED: 1991, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 59-60
AUTHORS: J.C Soares; A.A Melo; Alves, E; M.F da Silva; W.P Gillin; B.J Sealy;
PUBLISHED: 1991, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 59-60
362
TITLE: Epitaxial regrowth and lattice location of indium implanted in arsenic-preamorphized silicon Full Text
AUTHORS: Alves, E; M.F Da Silva; J.C Soares; A.A Melo; May, J; Haslar, V; Seidl, P; Feuser, U; Vianden, R;
PUBLISHED: 1991, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 55, ISSUE: 1-4
AUTHORS: Alves, E; M.F Da Silva; J.C Soares; A.A Melo; May, J; Haslar, V; Seidl, P; Feuser, U; Vianden, R;
PUBLISHED: 1991, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 55, ISSUE: 1-4
363
TITLE: Regrowth of indium-implanted (100), (110) and (111) silicon crystals studied with Rutherford backscattering and perturbed angular correlation techniques Full Text
AUTHORS: Alves, E; M.F Da Silva; A.A Melo; J.C Soares; Feuser, U; Vianden, R;
PUBLISHED: 1989, SOURCE: Materials Science and Engineering: B, VOLUME: 4, ISSUE: 1-4
AUTHORS: Alves, E; M.F Da Silva; A.A Melo; J.C Soares; Feuser, U; Vianden, R;
PUBLISHED: 1989, SOURCE: Materials Science and Engineering: B, VOLUME: 4, ISSUE: 1-4
