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Identified 4

1

TITLE: 1.3-1.5 mu m electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures Full Text
AUTHORS: Baidus, NV; Zvonkov, BN; Mokeeva, PB; Uskova, EA; Tikhov, SV; Vasilevskiy, MI ; Gomes, MJM ; Filonovich, SA ;
PUBLISHED: 2004, SOURCE: 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-13) in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 19, ISSUE: 4

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2

TITLE: Tuning the energy spectrum of InAs/GaAs quantum dots by varying the thickness and composition of the thin double GaAs/InGaAs cladding layer Full Text
AUTHORS: Karpovich, IA; Zvonkov, BN; Levichev, SB ; Baidus, NV; Tikhov, SV; Filatov, DO; Gorshkov, AP; Ermakov, SY;
PUBLISHED: 2004, SOURCE: SEMICONDUCTORS, VOLUME: 38, ISSUE: 4

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3

TITLE: Effect of hydrogen on the photoelectric properties of palladium/anodic oxide/gallium arsenide Schottky diodes Full Text
AUTHORS: Tikhov, SV; Shobolov, EL; Podol'skiy, VV; Levichev, SB;
PUBLISHED: 2003, SOURCE: TECHNICAL PHYSICS, VOLUME: 48, ISSUE: 2

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4

TITLE: Effect of surface modification on the properties of hydrogen-sensitive GaAs-Based Schottky diodes Full Text
AUTHORS: Tikhov, SV; Shobolov, EL; Levichev, SB; Baidus, NV;
PUBLISHED: 2003, SOURCE: TECHNICAL PHYSICS, VOLUME: 48, ISSUE: 5

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