M. O. Trypachko
AuthID: R-00F-D1J
1
TITLE: Vacancy-dioxygen centers in Si-rich SiGe alloys Full Text
AUTHORS: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
AUTHORS: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
2
TITLE: Local vibrations of interstitial carbon in SiGe alloys Full Text
AUTHORS: L.I Khirunenko; Yu.V Pomozov; M.G Sosnin; M.O Trypachko; Duvanskii, A; V.J.B Torres; Coutinho, J; Jones, R; P.R Briddon; N.V Abrosimov; Riemann, H;
PUBLISHED: 2006, SOURCE: Materials Science in Semiconductor Processing, VOLUME: 9, ISSUE: 4-5
AUTHORS: L.I Khirunenko; Yu.V Pomozov; M.G Sosnin; M.O Trypachko; Duvanskii, A; V.J.B Torres; Coutinho, J; Jones, R; P.R Briddon; N.V Abrosimov; Riemann, H;
PUBLISHED: 2006, SOURCE: Materials Science in Semiconductor Processing, VOLUME: 9, ISSUE: 4-5
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