A. V. Zdoroveishev
AuthID: R-00F-KAG
1
TITLE: Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy Full Text
AUTHORS: Levichev, S ; Volkova, NS; Gorshkov, AP; Zdoroveishev, AV; Vikhrova, OV; Utsyna, EV; Istomin, LA; Zvonkov, BN;
PUBLISHED: 2014, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 147
AUTHORS: Levichev, S ; Volkova, NS; Gorshkov, AP; Zdoroveishev, AV; Vikhrova, OV; Utsyna, EV; Istomin, LA; Zvonkov, BN;
PUBLISHED: 2014, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 147
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TITLE: Investigation of the buried InAs/GaAs quantum dots by atomic force microscopy combined with selective chemical etching
AUTHORS: Karpovich, IA; Baidus, NV; Zvonkov, BN; Filatov, DO; Levichev, SB; Zdoroveishev, AV; Perevoshikov, VA;
PUBLISHED: 2001, SOURCE: Scanning Probe Microscopy 2001 Workshop in PHYSICS OF LOW-DIMENSIONAL STRUCTURES, VOLUME: 3-4
AUTHORS: Karpovich, IA; Baidus, NV; Zvonkov, BN; Filatov, DO; Levichev, SB; Zdoroveishev, AV; Perevoshikov, VA;
PUBLISHED: 2001, SOURCE: Scanning Probe Microscopy 2001 Workshop in PHYSICS OF LOW-DIMENSIONAL STRUCTURES, VOLUME: 3-4
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