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TITLE: Crystalfield symmetries of luminescent Eu3+ centers in GaN: The importance of the D-5(0) to F-7(1) transition  Full Text
AUTHORS: O'Donnell, KP; Edwards, PR; Yamaga, M; Lorenz, K; Kappers, MJ; Bockowski, M;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef
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TITLE: Europium-doped GaN(Mg): beyond the limits of the light-emitting diode. Europium-doped GaN(Mg): beyond the limits of the light-emitting diode  Full Text
AUTHORS: O'Donnell, KP; Edwards, PR; Kappers, MJ; Lorenz, K; Alves, E; Bockowski, M;
PUBLISHED: 2014, SOURCE: 10th International Conference on Nitride Semiconductors (ICNS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, VOLUME: 11, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef
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TITLE: It's not easy being green: Strategies for all-nitrides, all-colour solid state lighting  Full Text
AUTHORS: O'Donnell, KP; Auf der Maur, M; Di Carlo, A; Lorenz, K ; the SORBET consortium, ;
PUBLISHED: 2012, SOURCE: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, VOLUME: 6, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef
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TITLE: Localization of excitation in InGaN epilayers  Full Text
AUTHORS: Kachkanov, V; O'Donnell, KP; Pereira, S ; Martin, RW;
PUBLISHED: 2007, SOURCE: PHILOSOPHICAL MAGAZINE, VOLUME: 87, ISSUE: 13
INDEXED IN: Scopus WOS CrossRef