H. V. Wenckstern
AuthID: R-00G-4J2
1
TITLE: Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films Full Text
AUTHORS: Lorenz, M; Lajn, A; Frenzel, H; Wenckstern, HV; Grundmann, M; Barquinha, P ; Martins, R ; Fortunato, E ;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 97, ISSUE: 24
AUTHORS: Lorenz, M; Lajn, A; Frenzel, H; Wenckstern, HV; Grundmann, M; Barquinha, P ; Martins, R ; Fortunato, E ;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 97, ISSUE: 24
