R. Lechner
AuthID: R-00G-6W9
1
TITLE: Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation
AUTHORS: Stegner, AR; Pereira, RN ; Lechner, R; Klein, K; Wiggers, H; Stutzmann, M; Brandt, MS;
PUBLISHED: 2009, SOURCE: PHYSICAL REVIEW B, VOLUME: 80, ISSUE: 16
AUTHORS: Stegner, AR; Pereira, RN ; Lechner, R; Klein, K; Wiggers, H; Stutzmann, M; Brandt, MS;
PUBLISHED: 2009, SOURCE: PHYSICAL REVIEW B, VOLUME: 80, ISSUE: 16
