Chandra C. Sekhar
AuthID: R-00G-D4Y
1
TITLE: Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric. Physical properties of Silicon MOS devices with TiO2 gate dielectric Full Text
AUTHORS: Chandra C Sekhar; Kondaiah, P; Jagadeesh Chandra, SVJ; Mohan M Rao; Uthanna, S;
PUBLISHED: 2012, SOURCE: SURFACE AND INTERFACE ANALYSIS, VOLUME: 44, ISSUE: 9
AUTHORS: Chandra C Sekhar; Kondaiah, P; Jagadeesh Chandra, SVJ; Mohan M Rao; Uthanna, S;
PUBLISHED: 2012, SOURCE: SURFACE AND INTERFACE ANALYSIS, VOLUME: 44, ISSUE: 9
