Shin Ichiro Sato
AuthID: R-00H-KRY
1
TITLE: Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study Full Text
AUTHORS: Ivana Capan; Tomislav Brodar; Zeljko Pastuovic; Rainer Siegele; Takeshi Ohshima; Shin ichiro Sato; Takahiro Makino; Luka Snoj; Vladimir Radulovic; Jose Coutinho; Vitor J B Torres; Kamel Demmouche;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
AUTHORS: Ivana Capan; Tomislav Brodar; Zeljko Pastuovic; Rainer Siegele; Takeshi Ohshima; Shin ichiro Sato; Takahiro Makino; Luka Snoj; Vladimir Radulovic; Jose Coutinho; Vitor J B Torres; Kamel Demmouche;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
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