C. Fenouillet Beranger
AuthID: R-00J-02P
1
TITLE: Robust Multi-V-T 4T SRAM Cell in 45nm Thin BOx Fully-Depleted SOI Technology with Ground Plane
AUTHORS: Noel, JP; Thomas, O; Fenouillet Beranger, C; Jaud, MA; Amara, A;
PUBLISHED: 2009, SOURCE: International Conference on Integrated Circuit Design and Technology in 2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS
AUTHORS: Noel, JP; Thomas, O; Fenouillet Beranger, C; Jaud, MA; Amara, A;
PUBLISHED: 2009, SOURCE: International Conference on Integrated Circuit Design and Technology in 2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS
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