S. V. Morozov
AuthID: R-00J-4JS
1
TITLE: Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect
AUTHORS: Castro, E. V. ; Novoselov, KS; Morozov, SV; Peres, NMR ; Dos Santos, JMBL ; Nilsson, J; Guinea, F; Geim, AK; Castro Neto, AH;
PUBLISHED: 2007, SOURCE: PHYSICAL REVIEW LETTERS, VOLUME: 99, ISSUE: 21
AUTHORS: Castro, E. V. ; Novoselov, KS; Morozov, SV; Peres, NMR ; Dos Santos, JMBL ; Nilsson, J; Guinea, F; Geim, AK; Castro Neto, AH;
PUBLISHED: 2007, SOURCE: PHYSICAL REVIEW LETTERS, VOLUME: 99, ISSUE: 21
2
TITLE: ELECTRON-TUNNELING THROUGH SINGLE-BARRIER HETEROSTRUCTURES IN A MAGNETIC-FIELD
AUTHORS: DUBROVSKII, YV; KHANIN, YN; LARKIN, IA; MOROZOV, SV; ANDERSSON, TG; SODERSTROM, JR;
PUBLISHED: 1994, SOURCE: PHYSICAL REVIEW B, VOLUME: 50, ISSUE: 7
AUTHORS: DUBROVSKII, YV; KHANIN, YN; LARKIN, IA; MOROZOV, SV; ANDERSSON, TG; SODERSTROM, JR;
PUBLISHED: 1994, SOURCE: PHYSICAL REVIEW B, VOLUME: 50, ISSUE: 7
INDEXED IN: 
Scopus 
WOS
Scopus WOS3
TITLE: SEQUENTIAL EMISSION OF OPTICAL PHONONS BY BALLISTIC ELECTRONS IN SINGLE-BARRIER HETEROSTRUCTURES
AUTHORS: DUBROVSKII, YV; LARKIN, IA; MOROZOV, SV; KHANIN, YN; ANDERSSON, TG;
PUBLISHED: 1994, SOURCE: SEMICONDUCTORS, VOLUME: 28, ISSUE: 11
AUTHORS: DUBROVSKII, YV; LARKIN, IA; MOROZOV, SV; KHANIN, YN; ANDERSSON, TG;
PUBLISHED: 1994, SOURCE: SEMICONDUCTORS, VOLUME: 28, ISSUE: 11
INDEXED IN: WOS
WOS4
TITLE: ENERGY QUASIBALLISTICS IN MICROSTRUCTURES WITH A 2-DIMENSIONAL ELECTRON-GAS
AUTHORS: DUBROVSKII, YV; LARKIN, IA; MOROZOV, SV;
PUBLISHED: 1992, SOURCE: SOVIET PHYSICS SEMICONDUCTORS-USSR, VOLUME: 26, ISSUE: 3
AUTHORS: DUBROVSKII, YV; LARKIN, IA; MOROZOV, SV;
PUBLISHED: 1992, SOURCE: SOVIET PHYSICS SEMICONDUCTORS-USSR, VOLUME: 26, ISSUE: 3
INDEXED IN: WOS
WOS5
TITLE: LOW-TEMPERATURE ENERGY QUASIBALLISTICS IN GAAS MICROSTRUCTURES
AUTHORS: DUBROVSKII, YV; LARKIN, IA; MOROZOV, SV; BORISOV, AV; BUNIN, GG; INOZEMTSEV, SA; LAPIN, VG; MALAKHOV, BA;
PUBLISHED: 1990, SOURCE: SOVIET PHYSICS SEMICONDUCTORS-USSR, VOLUME: 24, ISSUE: 5
AUTHORS: DUBROVSKII, YV; LARKIN, IA; MOROZOV, SV; BORISOV, AV; BUNIN, GG; INOZEMTSEV, SA; LAPIN, VG; MALAKHOV, BA;
PUBLISHED: 1990, SOURCE: SOVIET PHYSICS SEMICONDUCTORS-USSR, VOLUME: 24, ISSUE: 5
INDEXED IN: WOS
WOS6
TITLE: ENERGY QUASIBALLISTIC IN GAAS-MESFETS Full Text
AUTHORS: DUBROVSKII, YV; LARKIN, IA; MOROZOV, SV;
PUBLISHED: 1990, SOURCE: SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 8, ISSUE: 2
AUTHORS: DUBROVSKII, YV; LARKIN, IA; MOROZOV, SV;
PUBLISHED: 1990, SOURCE: SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 8, ISSUE: 2
INDEXED IN: Scopus WOS
Scopus WOS