José Pedro de Abreu Coutinho
AuthID: R-000-8V3
51
TITLE: Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling
AUTHORS: Capan, I; Brodar, T; Coutinho, J; Ohshima, T; Markevich, VP; Peaker, AR;
PUBLISHED: 2018, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 124, ISSUE: 24
AUTHORS: Capan, I; Brodar, T; Coutinho, J; Ohshima, T; Markevich, VP; Peaker, AR;
PUBLISHED: 2018, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 124, ISSUE: 24
52
TITLE: Deep level defects in 4H-SiC epitaxial layers
AUTHORS: Ivana Capan; Tomislav Brodar; Takeshi Ohshima; Shin Ichiro Sato; Takahiro Makino; Željko Pastuović; Rainer Siegele; Luka Snoj; Vladimir Radulović; José Coutinho; Vitor J B Torres; Kamel Demmouche;
PUBLISHED: 2018, SOURCE: Materials Science Forum, VOLUME: 924 MSF
AUTHORS: Ivana Capan; Tomislav Brodar; Takeshi Ohshima; Shin Ichiro Sato; Takahiro Makino; Željko Pastuović; Rainer Siegele; Luka Snoj; Vladimir Radulović; José Coutinho; Vitor J B Torres; Kamel Demmouche;
PUBLISHED: 2018, SOURCE: Materials Science Forum, VOLUME: 924 MSF
53
TITLE: First-principles Calculations of Structural, Magnetic Electronic and Optical Properties of Rare-earth Metals TbX (X=N, O, S, Se)
AUTHORS: Hasni, L; Ameri, M; Bensaid, D; Ameri, I; Mesbah, S; Al Douri, Y; Coutinho, J;
PUBLISHED: 2017, SOURCE: JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, VOLUME: 30, ISSUE: 12
AUTHORS: Hasni, L; Ameri, M; Bensaid, D; Ameri, I; Mesbah, S; Al Douri, Y; Coutinho, J;
PUBLISHED: 2017, SOURCE: JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, VOLUME: 30, ISSUE: 12
54
TITLE: Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon
AUTHORS: Vaqueiro Contreras, M; Markevich, VP; Halsall, MP; Peaker, AR; Santos, P; Coutinho, J; Oberg, S; Murin, LI; Falster, R; Binns, J; Monakhov, EV; Svensson, BG;
PUBLISHED: 2017, SOURCE: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, VOLUME: 11, ISSUE: 8
AUTHORS: Vaqueiro Contreras, M; Markevich, VP; Halsall, MP; Peaker, AR; Santos, P; Coutinho, J; Oberg, S; Murin, LI; Falster, R; Binns, J; Monakhov, EV; Svensson, BG;
PUBLISHED: 2017, SOURCE: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, VOLUME: 11, ISSUE: 8
55
TITLE: Comment on "Different STM images of the superstructure on a clean Si(133)-6 x 2 surface" (JETP Letters 105, 477 (2017))
AUTHORS: Zhachuk, R; Coutinho, J;
PUBLISHED: 2017, SOURCE: JETP LETTERS, VOLUME: 106, ISSUE: 5
AUTHORS: Zhachuk, R; Coutinho, J;
PUBLISHED: 2017, SOURCE: JETP LETTERS, VOLUME: 106, ISSUE: 5
56
TITLE: Si(111) strained layers on Ge(111): Evidence for c (2×4) domains
AUTHORS: Zhachuk, R; Coutinho, J; Dolbak, A; Cherepanov, V; Voigtländer, B;
PUBLISHED: 2017, SOURCE: Physical Review B, VOLUME: 96, ISSUE: 8
AUTHORS: Zhachuk, R; Coutinho, J; Dolbak, A; Cherepanov, V; Voigtländer, B;
PUBLISHED: 2017, SOURCE: Physical Review B, VOLUME: 96, ISSUE: 8
57
TITLE: Theory of the carbon vacancy in 4H-SiC: Crystal field and pseudo-Jahn-Teller effects
AUTHORS: Coutinho, J; Torres, VJB; Demmouche, K; Oberg, S;
PUBLISHED: 2017, SOURCE: PHYSICAL REVIEW B, VOLUME: 96, ISSUE: 17
AUTHORS: Coutinho, J; Torres, VJB; Demmouche, K; Oberg, S;
PUBLISHED: 2017, SOURCE: PHYSICAL REVIEW B, VOLUME: 96, ISSUE: 17
58
TITLE: Recombination via transition metals in solar silicon: The significance of hydrogen–metal reactions and lattice sites of metal atoms
AUTHORS: Mullins, J; Leonard, S; Markevich, VP; Hawkins, ID; Santos, P; Coutinho, J; Marinopoulos, AG; Murphy, JD; Halsall, MP; Peaker, AR;
PUBLISHED: 2017, SOURCE: physica status solidi (a), VOLUME: 214, ISSUE: 7
AUTHORS: Mullins, J; Leonard, S; Markevich, VP; Hawkins, ID; Santos, P; Coutinho, J; Marinopoulos, AG; Murphy, JD; Halsall, MP; Peaker, AR;
PUBLISHED: 2017, SOURCE: physica status solidi (a), VOLUME: 214, ISSUE: 7
59
TITLE: Theory of a carbon‐oxygen‐hydrogen recombination center in n‐type Si
AUTHORS: Paulo Santos; José Coutinho; Sven Öberg; Michelle Vaqueiro‐Contreras; Vladimir P Markevich; Matthew P Halsall; Anthony R Peaker;
PUBLISHED: 2017, SOURCE: physica status solidi (a), VOLUME: 214, ISSUE: 7
AUTHORS: Paulo Santos; José Coutinho; Sven Öberg; Michelle Vaqueiro‐Contreras; Vladimir P Markevich; Matthew P Halsall; Anthony R Peaker;
PUBLISHED: 2017, SOURCE: physica status solidi (a), VOLUME: 214, ISSUE: 7
60
TITLE: Mechanisms of Si and Ge diffusion on surfactant terminated (111) silicon and germanium surfaces Full Text
AUTHORS: Zhachuk, R; Coutinho, J;
PUBLISHED: 2016, SOURCE: SURFACE SCIENCE, VOLUME: 647
AUTHORS: Zhachuk, R; Coutinho, J;
PUBLISHED: 2016, SOURCE: SURFACE SCIENCE, VOLUME: 647
