Katharina Lorenz
AuthID: R-000-90E
91
TITLE: Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers Full Text
AUTHORS: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K; Alves, E; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 8
AUTHORS: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K; Alves, E; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 8
92
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al 0.15 Ga 0.85 N Full Text
AUTHORS: Magalhães, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 49, ISSUE: 13
AUTHORS: Magalhães, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 49, ISSUE: 13
93
TITLE: Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si (100): local correlation between the morphology and metal content
AUTHORS: Redondo Cubero, A; Galiana, B; Lorenz, K; Palomares, FJ; Bahena, D; Ballesteros, C; Hernandez Calderon, I; Vazquez, L;
PUBLISHED: 2016, SOURCE: NANOTECHNOLOGY, VOLUME: 27, ISSUE: 44
AUTHORS: Redondo Cubero, A; Galiana, B; Lorenz, K; Palomares, FJ; Bahena, D; Ballesteros, C; Hernandez Calderon, I; Vazquez, L;
PUBLISHED: 2016, SOURCE: NANOTECHNOLOGY, VOLUME: 27, ISSUE: 44
94
TITLE: Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium Full Text
AUTHORS: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 16
AUTHORS: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 16
95
TITLE: Ion-beam induced effects in multi-layered semiconductor systems
AUTHORS: Wendler, E; Sobolev, NA; Redondo Cubero, A; Lorenz, K;
PUBLISHED: 2016, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 253, ISSUE: 11
AUTHORS: Wendler, E; Sobolev, NA; Redondo Cubero, A; Lorenz, K;
PUBLISHED: 2016, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 253, ISSUE: 11
96
TITLE: Correction to "Spectroscopic Analysis of Eu 3+ Implanted and Annealed GaN Layers and Nanowires"
AUTHORS: Rodrigues, J; Leitão, MF; Carreira, JFC; Ben Sedrine, N; Santos, NF; Felizardo, M ; Auzelle, T; Daudin, B; Alves, E; Neves, AJ; Correia, MR; Costa, FM; Lorenz, K; Monteiro, T;
PUBLISHED: 2016, SOURCE: Journal of Physical Chemistry C, VOLUME: 120, ISSUE: 12
AUTHORS: Rodrigues, J; Leitão, MF; Carreira, JFC; Ben Sedrine, N; Santos, NF; Felizardo, M ; Auzelle, T; Daudin, B; Alves, E; Neves, AJ; Correia, MR; Costa, FM; Lorenz, K; Monteiro, T;
PUBLISHED: 2016, SOURCE: Journal of Physical Chemistry C, VOLUME: 120, ISSUE: 12
97
TITLE: Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents Full Text
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E; Araujo, JP ; Monteiro, T; Lorenz, K;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E; Araujo, JP ; Monteiro, T; Lorenz, K;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
IN MY: 
ORCID | 
ResearcherID
ORCID | ResearcherID98
TITLE: Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission Full Text
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2015, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 30, ISSUE: 4
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2015, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 30, ISSUE: 4
99
TITLE: Ion damage overrides structural disorder in silicon surface nanopatterning by low-energy ion beam sputtering
AUTHORS: Moreno Barrado, A; Gago, R; Redondo Cubero, A; Vazquez, L; Munoz Garcia, J; Cuerno, R; Lorenz, K; Castro, M;
PUBLISHED: 2015, SOURCE: EPL, VOLUME: 109, ISSUE: 4
AUTHORS: Moreno Barrado, A; Gago, R; Redondo Cubero, A; Vazquez, L; Munoz Garcia, J; Cuerno, R; Lorenz, K; Castro, M;
PUBLISHED: 2015, SOURCE: EPL, VOLUME: 109, ISSUE: 4
INDEXED IN: 
Scopus WOS
Scopus WOS IN MY: ORCID | ResearcherID
ORCID | ResearcherID100
TITLE: Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen Full Text
AUTHORS: Marco A Sousa; Teresa C Esteves; Nabiha Ben Sedrine; Joana Rodrigues; Marcio B Lourenco; Andres Redondo Cubero; Eduardo Alves; Kevin P O'Donnell; Michal Bockowski; Christian Wetzel; Maria R Correia; Katharina Lorenz; Teresa Monteiro;
PUBLISHED: 2015, SOURCE: SCIENTIFIC REPORTS, VOLUME: 5
AUTHORS: Marco A Sousa; Teresa C Esteves; Nabiha Ben Sedrine; Joana Rodrigues; Marcio B Lourenco; Andres Redondo Cubero; Eduardo Alves; Kevin P O'Donnell; Michal Bockowski; Christian Wetzel; Maria R Correia; Katharina Lorenz; Teresa Monteiro;
PUBLISHED: 2015, SOURCE: SCIENTIFIC REPORTS, VOLUME: 5
