Katharina Lorenz
AuthID: R-000-90E
91
TITLE: Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices Full Text
AUTHORS: Faye, DN; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
AUTHORS: Faye, DN; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
92
TITLE: Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells
AUTHORS: Lorenz, K; Redondo Cubero, A; Lourenco, MB; Sequeira, MC; Peres, M; Freitas, A; Alves, LC; Alves, E; Leitao, MP; Rodrigues, J; Ben Sedrine, N; Correia, MR; Monteiro, T;
PUBLISHED: 2016, SOURCE: Conference on Gallium Nitride Materials and Devices XI in GALLIUM NITRIDE MATERIALS AND DEVICES XI, VOLUME: 9748
AUTHORS: Lorenz, K; Redondo Cubero, A; Lourenco, MB; Sequeira, MC; Peres, M; Freitas, A; Alves, LC; Alves, E; Leitao, MP; Rodrigues, J; Ben Sedrine, N; Correia, MR; Monteiro, T;
PUBLISHED: 2016, SOURCE: Conference on Gallium Nitride Materials and Devices XI in GALLIUM NITRIDE MATERIALS AND DEVICES XI, VOLUME: 9748
93
TITLE: Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers Full Text
AUTHORS: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K; Alves, E; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 8
AUTHORS: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K; Alves, E; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 8
94
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al 0.15 Ga 0.85 N Full Text
AUTHORS: Magalhães, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 49, ISSUE: 13
AUTHORS: Magalhães, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 49, ISSUE: 13
95
TITLE: Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si (100): local correlation between the morphology and metal content
AUTHORS: Redondo Cubero, A; Galiana, B; Lorenz, K; Palomares, FJ; Bahena, D; Ballesteros, C; Hernandez Calderon, I; Vazquez, L;
PUBLISHED: 2016, SOURCE: NANOTECHNOLOGY, VOLUME: 27, ISSUE: 44
AUTHORS: Redondo Cubero, A; Galiana, B; Lorenz, K; Palomares, FJ; Bahena, D; Ballesteros, C; Hernandez Calderon, I; Vazquez, L;
PUBLISHED: 2016, SOURCE: NANOTECHNOLOGY, VOLUME: 27, ISSUE: 44
96
TITLE: Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium Full Text
AUTHORS: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 16
AUTHORS: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 16
97
TITLE: Ion-beam induced effects in multi-layered semiconductor systems
AUTHORS: Wendler, E; Sobolev, NA; Redondo Cubero, A; Lorenz, K;
PUBLISHED: 2016, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 253, ISSUE: 11
AUTHORS: Wendler, E; Sobolev, NA; Redondo Cubero, A; Lorenz, K;
PUBLISHED: 2016, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 253, ISSUE: 11
98
TITLE: Correction to "Spectroscopic Analysis of Eu 3+ Implanted and Annealed GaN Layers and Nanowires"
AUTHORS: Rodrigues, J; Leitão, MF; Carreira, JFC; Ben Sedrine, N; Santos, NF; Felizardo, M ; Auzelle, T; Daudin, B; Alves, E; Neves, AJ; Correia, MR; Costa, FM; Lorenz, K; Monteiro, T;
PUBLISHED: 2016, SOURCE: Journal of Physical Chemistry C, VOLUME: 120, ISSUE: 12
AUTHORS: Rodrigues, J; Leitão, MF; Carreira, JFC; Ben Sedrine, N; Santos, NF; Felizardo, M ; Auzelle, T; Daudin, B; Alves, E; Neves, AJ; Correia, MR; Costa, FM; Lorenz, K; Monteiro, T;
PUBLISHED: 2016, SOURCE: Journal of Physical Chemistry C, VOLUME: 120, ISSUE: 12
99
TITLE: Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents Full Text
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E; Araujo, JP ; Monteiro, T; Lorenz, K;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E; Araujo, JP ; Monteiro, T; Lorenz, K;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
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ORCID | 
ResearcherID
ORCID | ResearcherID100
TITLE: Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission Full Text
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2015, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 30, ISSUE: 4
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2015, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 30, ISSUE: 4
