41
TITLE: Ion beam induced current analysis in GaN microwires  Full Text
AUTHORS: Dirkjan Verheij; Marco Peres; Susana Cardoso; Luís Cerqueira Alves; Eduardo Alves; Cristophe Durand; Joël Eymery; Jorge Fernandes; Katharina Lorenz;
PUBLISHED: 2020, SOURCE: EPJ Web of Conferences, VOLUME: 233
INDEXED IN: CrossRef: 1 Handle
IN MY: ORCID
42
TITLE: RBS/C, XRR, and XRD Studies of Damage Buildup in Er-Implanted ZnO  Full Text
AUTHORS: Jozwik, P; Magalhaes, S; Ratajczak, R; Mieszczynski, C; Sequeira, M; Turos, A; Bottger, R; Heller, R; Lorenz, K; Alves, E;
PUBLISHED: 2019, SOURCE: Symposium K on Defect-Induced Effects in Nanomaterials at the Meeting of the European-Materials-Research-Society in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 256, ISSUE: 5
INDEXED IN: Scopus WOS CrossRef: 17
IN MY: ORCID
43
TITLE: Eu Activation in beta-Ga2O3 MOVPE Thin Films by Ion Implantation
AUTHORS: Peres, M; Nogales, E; Mendez, B; Lorenz, K; Correia, MR; Monteiro, T; Ben Sedrine, N;
PUBLISHED: 2019, SOURCE: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, VOLUME: 8, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 15 Handle
IN MY: ORCID
44
TITLE: Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Lorenz, K; Alves, E; Monteiro, T;
PUBLISHED: 2019, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 210
INDEXED IN: Scopus WOS CrossRef: 1 Handle
IN MY: ORCID
45
TITLE: Measuring strain caused by ion implantation in GaN
AUTHORS: Mendes, P; Lorenz, K; Alves, E; Schwaiger, S; Scholz, F; Magalhaes, S;
PUBLISHED: 2019, SOURCE: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 98
INDEXED IN: Scopus WOS CrossRef: 15 Handle
IN MY: ORCID
46
TITLE: Incorporation of Europium into GaN Nanowires by Ion Implantation
AUTHORS: Faye, DN; Biquard, X; Nogales, E; Felizardo, M ; Peres, M; Redondo Cubero, A; Auzelle, T; Daudin, B; Tizei, LHG; Kociak, M; Ruterana, P; Möller, W; Méndez, B; Alves, E; Lorenz, K;
PUBLISHED: 2019, SOURCE: Journal of Physical Chemistry C, VOLUME: 123, ISSUE: 18
INDEXED IN: Scopus CrossRef: 13
IN MY: ORCID
47
TITLE: Engineering strain and conductivity of MoO3 by ion implantation  Full Text
AUTHORS: Daniela R Pereira; Carlos Diaz Guerra; Marco Peres; Sergio Magalhaes; Joao G Correia; Jose G Marques; Ana G Silva; Eduardo Alves; Katharina Lorenz;
PUBLISHED: 2019, SOURCE: ACTA MATERIALIA, VOLUME: 169
INDEXED IN: WOS
48
TITLE: Micro-Opto-Electro-Mechanical Device Based on Flexible beta-Ga2O3 Micro-Lamellas
AUTHORS: Peres, M; Fernandes, AJS; Oliveira, FJ; Alves, LC; Alves, E; Monteiro, TS; Cardoso, S; Alonso Orts, M; Nogales, E; Mendez, B; Villora, EG; Shimamura, K; Lorenz, K;
PUBLISHED: 2019, SOURCE: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, VOLUME: 8, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 4
IN MY: ORCID
49
TITLE: Modelling of Optical Damage in Nanorippled ZnO Produced by Ion Irradiation
AUTHORS: Redondo Cubero, A; Vazquez, L; Jalabert, D; Lorenz, K; Ben Sedrine, N;
PUBLISHED: 2019, SOURCE: CRYSTALS, VOLUME: 9, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 4 Handle
IN MY: ORCID
50
TITLE: Studying electronic properties in GaN without electrical contacts using gamma-gamma vs e(-)-gamma Perturbed Angular Correlations  Full Text
AUTHORS: Barbosa, MB; Correia, JG; Lorenz, K; Vianden, R; Araujo, JP ;
PUBLISHED: 2019, SOURCE: SCIENTIFIC REPORTS, VOLUME: 9, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID
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