The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon

AuthID
 P-008-FXK
9
Author(s)
Markevich, VP
·
Peaker, AR
·
Lastovskii, SB
·
Murin, LI
·
Rayson, MJ
·
Svensson, BG
1
Editor(s)
Murphy, JD
Document Type
Proceedings Paper
Year published
2014
Published
in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XV in Solid State Phenomena, ISSN: 1012-0394
Volume: 205-206, Pages: 181-+ (3)
Conference
15Th International Conference on Gettering and Defect Engineering in Semiconductor Technology (Gadest), Date: SEP 22-27, 2013, Location: St Johns Coll, Oxford, ENGLAND, Sponsors: European Mat Res Soc, Host: St Johns Coll
Indexing
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Scopus®
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Publication Identifiers
SCOPUS: 2-s2.0-84886794627
Wos: WOS:000336338000025
Source Identifiers
ISSN: 1012-0394
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