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Bulk and Surface Properties of Amorphous Hydrogenated Fluorinated Silicon Grown from Sif4 and H2

AuthID
P-00F-MRJ

Author(s)

Maruyama, A

Shen Dashen, S

Chu, V

Liu, JZ

Campbell, I

Fauchet Phillipe, M

Wagner, S

Document Type

Article

Year published

1989

Published

in IEEE Transactions on Electron Devices, ISSN: 0018-9383

Volume: 36, Issue: 12, Pages: 2853-2858

Conference

International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology, Date: 1 November 1988 through 1 November 1988, Location: Yorktown Heights, NY, USA

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Metadata
Sources

Publication Identifiers

DOI: 10.1109/16.40946

Scopus: 2-s2.0-0024923603

Source Identifiers

ISSN: 0018-9383

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