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TÃTULO: Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition Full Text
AUTORES: Rogers, DJ; Teherani, FH; Monteiro, T; Soares, M ; Neves, A ; Carmo, M; Pereira, S; Correia, MR ; Lusson, A; Alves, E ; Barradas, NP ; Morrod, JK; Prior, KA; Kung, P; Yasan, A; Razeghi, M;
PUBLICAÇÃO: 2006, FONTE: 12th International Conference on II-VI Compounds in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 4, VOLUME: 3, NÚMERO: 4

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TÃTULO: Optical active centres in ZnO samples Full Text
AUTORES: Monteiro, T ; Soares, MJ ; Neves, A ; Pereira, S ; Correia, MR ; Peres, M; Alves, E ; Rogers, D; Teherani, F; Munoz SanJose, V; Trindade, T ; Pereira, A ;
PUBLICAÇÃO: 2006, FONTE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 9-20

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TÃTULO: Optical studies on a coherent InGaN/GaN layer Full Text
AUTORES: Correia, MR ; Pereira, S ; Alves, E ; Arnaudov, B;
PUBLICAÇÃO: 2006, FONTE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, NÚMERO: 4-6

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TÃTULO: Structural and optical characterization of light emitting InGaN/GaN epitaxial layers
AUTORES: Pereira, S ; Correia, MR ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1

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TÃTULO: Comment on "Direct evidence of nanocluster-induced luminescence in InGaN epifilms" [Appl. Phys. Lett. 86, 021911 (2005)] Full Text
AUTORES: Pereira, S; Correia, MR ; Alves, E ; O'Donnell, KP; Chang, HJ; Chen, CH; Chen, YF; Lin, TY; Chen, LC; Chen, KH; Lan, ZH;
PUBLICAÇÃO: 2005, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 87, NÚMERO: 13

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TÃTULO: Direct evidence for strain inhomogeneity in InxGa1-xN epilayers by Raman spectroscopy Full Text
AUTORES: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Watson, IM; Liu, C; Alves, E ; Sequeira, AD; Franco, N;
PUBLICAÇÃO: 2004, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 85, NÚMERO: 12

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TÃTULO: Optical studies on the red luminescence of InGaN epilayers Full Text
AUTORES: Correia, MR ; Pereira, S ; Pereira, E; Ferreira, RAS ; Frandon, J; Alves, E ; Watson, IM; Liu, C; Morel, A; Gil, B;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6

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TÃTULO: Annealing behavior and lattice site location of Er implanted InGaN Full Text
AUTORES: Alves, E ; Wahl, U ; Correia, MR ; Pereira, S ; De Vries, B; Vantomme, A;
PUBLICAÇÃO: 2003, FONTE: 13th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 206

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TÃTULO: Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared Spectroscopic Ellipsometry Full Text
AUTORES: Kasic, A; Schubert, M; Off, J; Kuhn, B; Scholz, F; Einfeldt, S; Bottcher, T; Hommel, D; As, DJ; Kohler, U; Dadgar, A; Krost, A; Saito, Y; Nanishi, Y; Correia, MR ; Pereira, S ; Darakchieva, V; Monemar, B; Amano, H; Akasaki, I; Wagner, G; ...Mais
PUBLICAÇÃO: 2003, FONTE: Physica Status Solidi C: Conferences, NÚMERO: 6 SPEC. ISS.

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