Eduardo Jorge da Costa Alves


AuthID: R-000-4EK

Publicações Confirmadas: 597



461
TÍTULO: The influence of in situ photoexcitation on a defect structure generation in Ar+ implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy  Full Text
AUTORES: Chtcherbatchev, KD; Bublik, VT; Markevich, AS; Mordkovich, VN; Alves, E ; Barradas, NP ; Sequeira, AD;
PUBLICAÇÃO: 2003, FONTE: X-TOP 2002 Conference in JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 36, NÚMERO: 10A
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
462
TÍTULO: Three-step amorphisation process in ion-implanted GaN at 15 K  Full Text
AUTORES: Wendler, E; Kamarou, A; Alves, E ; Gartner, K; Wesch, W;
PUBLICAÇÃO: 2003, FONTE: 13th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 206
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
463
TÍTULO: Analysis of sapphire implanted with different elements using artificial neural networks  Full Text
AUTORES: Vieira, A; Barradas, NP ; Alves, E ;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
464
TÍTULO: Analysis of strain depth variations in an In(0.19)Ga(0.81)N layer by Raman spectroscopy  Full Text
AUTORES: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Renucci, MA; Alves, E ; Sequeira, AD; Franco, N;
PUBLICAÇÃO: 2002, FONTE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef: 6
NO MEU: ORCID | ResearcherID
465
TÍTULO: Conductivity behaviour of Cr implanted TiO2  Full Text
AUTORES: da Silva, RC; Alves, E ; Cruz, MM ;
PUBLICAÇÃO: 2002, FONTE: 11th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 191, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
466
TÍTULO: Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells  Full Text
AUTORES: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLICAÇÃO: 2002, FONTE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef: 3
NO MEU: ORCID | ResearcherID
467
TÍTULO: Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing  Full Text
AUTORES: Pereira, S ; Pereira, E; Alves, E ; Barradas, NP ; O'Donnell, KP; Liu, C; Deatcher, CJ; Watson, IM;
PUBLICAÇÃO: 2002, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 81, NÚMERO: 16
INDEXADO EM: Scopus WOS CrossRef: 12
NO MEU: ORCID | ResearcherID
468
TÍTULO: Effects of ion bombardment on properties of d.c. sputtered superhard (Ti, Si, Al)N nanocomposite coatings  Full Text
AUTORES: Ribeiro, E; Malczyk, A; Carvalho, S ; Rebouta, L ; Fernandes, JV ; Alves, E ; Miranda, AS ;
PUBLICAÇÃO: 2002, FONTE: Spring Meeting of the European-Materials-Research-Society in SURFACE & COATINGS TECHNOLOGY, VOLUME: 151
INDEXADO EM: Scopus WOS CrossRef: 64
NO MEU: ORCID | ResearcherID
469
TÍTULO: Effects of ion implantation on the thermoluminescent properties of natural colourless topaz  Full Text
AUTORES: Souza, DN; Lima, JF; Valerio, MEG; Alves, E ; Caldas, LVE;
PUBLICAÇÃO: 2002, FONTE: 11th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 191, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
470
TÍTULO: Electrical conductivity of MgO crystals implanted with lithium ions  Full Text
AUTORES: Tardio, M; Ramirez, R; Gonzalez, R; Chen, Y; Alves, E ;
PUBLICAÇÃO: 2002, FONTE: 11th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 191, NÚMERO: 1-4
INDEXADO EM: Scopus WOS
NO MEU: ResearcherID
Página 47 de 60. Total de resultados: 597.

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