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571

TÃTULO: Etching of amorphous Al2O3 produced by ion implantation Full Text
AUTORES: McHargue, CJ; Hunn, JD; Joslin, DL; Alves, E ; daSilva, MF; Soares, JC ;
PUBLICAÇÃO: 1997, FONTE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127

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572

TÃTULO: Lattice site and photoluminescence of erbium implanted in alpha-A1(2)O(3)
AUTORES: vandenHoven, GN; Polman, A; Alves, E ; daSilva, MF; Melo, AA; Soares, JC ;
PUBLICAÇÃO: 1997, FONTE: JOURNAL OF MATERIALS RESEARCH, VOLUME: 12, NÚMERO: 5

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573

TÃTULO: Microscopic studies of implanted As-73 in diamond Full Text
AUTORES: Correia, JG ; Marques, JG ; Alves, E ; ForkelWirth, D; Jahn, SG; Restle, M; Dalmer, M; Hofsass, H; BharuthRam, K;
PUBLICAÇÃO: 1997, FONTE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127

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574

TÃTULO: Selective area vapor-phase epitaxy and structural properties of Hg1-xCdxTe on sapphire Full Text
AUTORES: Sochinskii, NV; Munoz, V; Bernardi, S; Espeso, JI; Alves, E ; daSilva, MF; Soares, JC ; Marin, C; Dieguez, E;
PUBLICAÇÃO: 1997, FONTE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 179, NÚMERO: 3-4

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575

TÃTULO: Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy Full Text
AUTORES: Sochinskii, NV; Munoz, V; Bellani, V; Vina, L; Dieguez, E; Alves, E ; daSilva, MF; Soares, JC ; Bernardi, S;
PUBLICAÇÃO: 1997, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 70, NÚMERO: 10

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576

TÃTULO: The photoluminescence of Pt-implanted silicon
AUTORES: Alves, E ; Bollmann, J; Deicher, M; Carmo, MC; Henry, MO; Knopf, MHA; Leitao, JP ; Magerle, R; McDonagh, CJ;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, NÚMERO: PART 1

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577

TÃTULO: Incorporation and stability of erbium in sapphire by ion implantation
AUTORES: Alves, E ; daSilva, MF; vandenHoven, GN; Polman, A; Melo, AA; Soares, JC;
PUBLICAÇÃO: 1996, FONTE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS

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578

TÃTULO: Ion beam mixing of chromium or zirconium films with sapphire Full Text
AUTORES: McHargue, CJ; Joslin, DL; White, CW; daSilva, MF; Alves, E ; Soares, JC ;
PUBLICAÇÃO: 1996, FONTE: 9th International Conference on Surface Modification of Metals by Ion Beams (SMMIB 95) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 83, NÚMERO: 1-3

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579

TÃTULO: Laser-assisted recrystallization to improve the surface morphology of CdTe epitaxial layers
AUTORES: Sochinskii, NV; Dieguez, E; Alves, E ; daSilva, MF; Soares, JC ; Bernardi, S; Garrido, J; AgulloRueda, F;
PUBLICAÇÃO: 1996, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, NÚMERO: 2

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580

TÃTULO: Low temperature epitaxial regrowth of mercury implanted sapphire Full Text
AUTORES: Alves, E ; daSilva, MF; Marques, JG ; Correia, JG ; Soares, JC ; Freitag, K;
PUBLICAÇÃO: 1996, FONTE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, NÚMERO: 1-4

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