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TÍTULO: Photoconduction in tunnel-coupled Ge/Si quantum dot arrays  Full Text
AUTORES: Stepina, NP; Yakimov, AI; Nenashev, AV; Dvurechenskii, AV; Sobolev, NA; Leitao, JP ; Kirienko, VV; Nikiforov, AI; Koptev, ES; Pereira, L ; Carmo, MC;
PUBLICAÇÃO: 2006, FONTE: JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, VOLUME: 103, NÚMERO: 2
INDEXADO EM: Scopus WOS CrossRef: 9
32
TÍTULO: RBS/channeling study of buried Ge quantum dots grown in a Si layer  Full Text
AUTORES: Fonseca, A; Alves, E ; Barradas, NP ; P. Leitao ; Sobolev, NA; Carmo, MC; Nikiforov, AI; Presting, H;
PUBLICAÇÃO: 2006, FONTE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, NÚMERO: 1-2 SPEC. ISS.
INDEXADO EM: Scopus WOS CrossRef: 4
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TÍTULO: Effect of Ge doping on the creation of luminescent radiation defects in MBE Si  Full Text
AUTORES: Ankiewicz, AO; Sobolev, NA; Leitao, JP ; Carmo, MC; Pereira, RN ; Hansen, JL; Larsen, AN;
PUBLICAÇÃO: 2006, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 248, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef: 3
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TÍTULO: Influence of matrix defects on the photoluminescence of InAs self-assembled quantum dots  Full Text
AUTORES: Chahboun, A ; Baidus, NV; Demina, PB; Zvonkov, BN; Gomes, MJM ; Cavaco, A; Sobole, NA; Carmo, MC; Vasilevskiy, MI ;
PUBLICAÇÃO: 2006, FONTE: International Conference on Trends in Nanotechnology in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 203, NÚMERO: 6
INDEXADO EM: Scopus WOS CrossRef: 6
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TÍTULO: Beam analysis of Ge/Si dots grown on ultrathin SiO2 interlayers
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 2
INDEXADO EM: Scopus WOS
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TÍTULO: Luminescence and structural properties of defects in ion implanted ZnO  Full Text
AUTORES: Monteiro, T ; Soares, MJ ; Neves, AJ ; Carmo, MC; Peres, M; Cruz, A; Alves, E ; Wahl, U ; Rita, E; Munoz SanJose, V; Zuniga Perez, J;
PUBLICAÇÃO: 2006, FONTE: 12th International Conference on II-VI Compounds in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 4, VOLUME: 3, NÚMERO: 4
INDEXADO EM: Scopus WOS CrossRef: 9
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TÍTULO: Optical and structural analysis of bulk ZnO samples undoped and rare earth doped by ion implantation  Full Text
AUTORES: Monteiro, T ; Neves, AJ ; Carmo, MC; Soares, MJ ; Peres, M; Alves, E ; Rita, E; Wahl, U ;
PUBLICAÇÃO: 2006, FONTE: Symposium on ZnO and Related Materials held at the 2005 Spring Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 39, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef: 20
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TÍTULO: Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition  Full Text
AUTORES: Rogers, DJ; Teherani, FH; Monteiro, T; Soares, M ; Neves, A ; Carmo, M; Pereira, S; Correia, MR ; Lusson, A; Alves, E ; Barradas, NP ; Morrod, JK; Prior, KA; Kung, P; Yasan, A; Razeghi, M;
PUBLICAÇÃO: 2006, FONTE: 12th International Conference on II-VI Compounds in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 4, VOLUME: 3, NÚMERO: 4
INDEXADO EM: Scopus WOS CrossRef: 16
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TÍTULO: Optical and structural study of Ge/Si quantum dots on Si(100) surface covered with a thin silicon oxide layer  Full Text
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2005, FONTE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, NÚMERO: SUPPL.
INDEXADO EM: Scopus WOS CrossRef: 5
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TÍTULO: Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions  Full Text
AUTORES: Monteiro, T ; Neves, AJ ; Soares, MJ ; Carmo, MC; Peres, M; Alves, E ; Rita, E;
PUBLICAÇÃO: 2005, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 87, NÚMERO: 19
INDEXADO EM: Scopus WOS CrossRef: 20
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