Maria Celeste da Silva do Carmo
AuthID: R-000-AQ5
61
TÃTULO: Photoluminescence and structure properties from mu c-Si:H and mu c-Si:H-PS samples Full Text
AUTORES: Ventura, PJ; Cerqueira, MF ; Carmo, MC; Ferreira, JA;
PUBLICAÇÃO: 1997, FONTE: Symposium B: Thin Film Materials for Large Area Electronics at the European-Materials-Research-Society 1996 Spring Meeting in THIN SOLID FILMS, VOLUME: 296, NÚMERO: 1-2
AUTORES: Ventura, PJ; Cerqueira, MF ; Carmo, MC; Ferreira, JA;
PUBLICAÇÃO: 1997, FONTE: Symposium B: Thin Film Materials for Large Area Electronics at the European-Materials-Research-Society 1996 Spring Meeting in THIN SOLID FILMS, VOLUME: 296, NÚMERO: 1-2
62
TÃTULO: UNIAXIAL-STRESS AND ZEEMAN MEASUREMENTS ON THE 943 MEV LUMINESCENCE BAND IN SILICON
AUTORES: CARMO, MC; MCGUIGAN, KG; HENRY, MO; DAVIES, G; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1990, FONTE: SYMP AT THE 1989 FALL MEETING OF THE MATERIALS RESEARCH SOC : IMPURITIES,DEFECTS, AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES in IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES, VOLUME: 163
AUTORES: CARMO, MC; MCGUIGAN, KG; HENRY, MO; DAVIES, G; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1990, FONTE: SYMP AT THE 1989 FALL MEETING OF THE MATERIALS RESEARCH SOC : IMPURITIES,DEFECTS, AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES in IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES, VOLUME: 163
INDEXADO EM: 
WOS
WOS63
TÃTULO: A UNIAXIAL-STRESS STUDY OF A COPPER-RELATED PHOTOLUMINESCENCE BAND IN SILICON Full Text
AUTORES: MCGUIGAN, KG; HENRY, MO; CARMO, MC; DAVIES, G; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1989, FONTE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, NÚMERO: 1-4
AUTORES: MCGUIGAN, KG; HENRY, MO; CARMO, MC; DAVIES, G; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1989, FONTE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, NÚMERO: 1-4
INDEXADO EM: 
Scopus WOS
Scopus WOS64
TÃTULO: LUMINESCENCE FROM TRANSITION-METAL CENTERS IN SILICON DOPED WITH SILVER AND NICKEL Full Text
AUTORES: NAZARE, MH; CARMO, MC; DUARTE, AJ;
PUBLICAÇÃO: 1989, FONTE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, NÚMERO: 1-4
AUTORES: NAZARE, MH; CARMO, MC; DUARTE, AJ;
PUBLICAÇÃO: 1989, FONTE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, NÚMERO: 1-4
INDEXADO EM: Scopus WOS
Scopus WOS