Nikolai Andreevitch Sobolev
AuthID: R-000-DJF
151
TÃTULO: Ferromagnetism and ferromagnetic resonance in mn implanted Si and GaAs
AUTORES: Sobolev, NA; Oliveira, MA; Amaral, VS ; Neves, A ; Carmo, MC; Wesch, W; Picht, O; Wendler, E; Kaiser, U; Heinrich, J;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1
AUTORES: Sobolev, NA; Oliveira, MA; Amaral, VS ; Neves, A ; Carmo, MC; Wesch, W; Picht, O; Wendler, E; Kaiser, U; Heinrich, J;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1
152
TÃTULO: Beam analysis of Ge/Si dots grown on ultrathin SiO2 interlayers
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 2
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 2
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ORCID153
TÃTULO: Hopping magnetoresistance in two-dimensional arrays of Ge/Si quantum dots Full Text
AUTORES: Yakimov, AI; Dvurechenskii, AV; Minkov, GM; Sherstobitov, AA; Nikiforov, AI; Bloshkin, AA; Stepina, NP; Leitao, JP ; Sobolev, NA; Pereira, L ; do Carmo, MC;
PUBLICAÇÃO: 2006, FONTE: 11th International Conference on Transport in Interacting and Disordered Systems in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 2, VOLUME: 3, NÚMERO: 2
AUTORES: Yakimov, AI; Dvurechenskii, AV; Minkov, GM; Sherstobitov, AA; Nikiforov, AI; Bloshkin, AA; Stepina, NP; Leitao, JP ; Sobolev, NA; Pereira, L ; do Carmo, MC;
PUBLICAÇÃO: 2006, FONTE: 11th International Conference on Transport in Interacting and Disordered Systems in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 2, VOLUME: 3, NÚMERO: 2
154
TÃTULO: Damage behaviour of GaAs/AlAs multilayer structures Full Text
AUTORES: Magalhães, S; Fonseca, A; Franco, N; N.P Barradas; Sobolev, N; Hey, R; Grahn, H; Alves, E;
PUBLICAÇÃO: 2006, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 249, NÚMERO: 1-2
AUTORES: Magalhães, S; Fonseca, A; Franco, N; N.P Barradas; Sobolev, N; Hey, R; Grahn, H; Alves, E;
PUBLICAÇÃO: 2006, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 249, NÚMERO: 1-2
155
TÃTULO: Optical and structural study of Ge/Si quantum dots on Si(100) surface covered with a thin silicon oxide layer Full Text
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2005, FONTE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, NÚMERO: SUPPL.
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2005, FONTE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, NÚMERO: SUPPL.
156
TÃTULO: High resolution backscattering studies of nanostructured magnetic and semiconducting materials Full Text
AUTORES: Fonseca, A; Franco, N; Alves, E ; Barradas, NP ; Leitao, JP ; Sobolev, NA; Banhart, DF; Presting, H; Ulyanov, VV; Nikiforov, AI;
PUBLICAÇÃO: 2005, FONTE: 18th International Conference on Application of Accelerators in Research and Industry (CAARI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 241, NÚMERO: 1-4
AUTORES: Fonseca, A; Franco, N; Alves, E ; Barradas, NP ; Leitao, JP ; Sobolev, NA; Banhart, DF; Presting, H; Ulyanov, VV; Nikiforov, AI;
PUBLICAÇÃO: 2005, FONTE: 18th International Conference on Application of Accelerators in Research and Industry (CAARI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 241, NÚMERO: 1-4
157
TÃTULO: Morphological transformation of a germanium layer grown on a silicon surface by molecular-beam epitaxy at low temperatures Full Text
AUTORES: Burbaev, TM; Kurbatov, VA; Rzaev, MM; Pogosov, AO; Sibel'din, NN; Tsvetkov, VA; Lichtenberger, H; Schaffler, F; Leitao, JP ; Sobolev, NA; Carmo, MC;
PUBLICAÇÃO: 2005, FONTE: Nanophotonics 2004 Workshop in PHYSICS OF THE SOLID STATE, VOLUME: 47, NÚMERO: 1
AUTORES: Burbaev, TM; Kurbatov, VA; Rzaev, MM; Pogosov, AO; Sibel'din, NN; Tsvetkov, VA; Lichtenberger, H; Schaffler, F; Leitao, JP ; Sobolev, NA; Carmo, MC;
PUBLICAÇÃO: 2005, FONTE: Nanophotonics 2004 Workshop in PHYSICS OF THE SOLID STATE, VOLUME: 47, NÚMERO: 1
158
TÃTULO: Orientation effects in the electronic and optical properties of germanium quantum wires
AUTORES: Kholod, AN; Shaposhnikov, VL; Sobolev, N; Borisenko, VE; D'Avitaya, FA; Ossicini, S;
PUBLICAÇÃO: 2004, FONTE: PHYSICAL REVIEW B, VOLUME: 70, NÚMERO: 3
AUTORES: Kholod, AN; Shaposhnikov, VL; Sobolev, N; Borisenko, VE; D'Avitaya, FA; Ossicini, S;
PUBLICAÇÃO: 2004, FONTE: PHYSICAL REVIEW B, VOLUME: 70, NÚMERO: 3
159
TÃTULO: The electronic structure and magnetic properties of transition metal-doped silicon carbide Full Text
AUTORES: Shaposhnikov, VL; Sobolev, NA;
PUBLICAÇÃO: 2004, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 16, NÚMERO: 10
AUTORES: Shaposhnikov, VL; Sobolev, NA;
PUBLICAÇÃO: 2004, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 16, NÚMERO: 10
160
TÃTULO: Structural characterization and luminescence of Ge/Si quantum dots
AUTORES: Fonseca, A; Sobolev, NA; Leitao, JP ; Carmo, MC; Franco, N; Presting, H; Sequeira, AD;
PUBLICAÇÃO: 2004, FONTE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
AUTORES: Fonseca, A; Sobolev, NA; Leitao, JP ; Carmo, MC; Franco, N; Presting, H; Sequeira, AD;
PUBLICAÇÃO: 2004, FONTE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
