Maria Alexandra Lopes da Fonseca
AuthID: R-000-KNT
21
TÃTULO: Optical and structural analysis of Ge/Si quantum dots grown on a Si(001) surface covered with a SiO2 sub-monolayer
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, A;
PUBLICAÇÃO: 2007, FONTE: 13th International Symposium on Nanstructures - Physics and Technology in INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NOS 3 AND 4, VOLUME: 6, NÚMERO: 3-4
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, A;
PUBLICAÇÃO: 2007, FONTE: 13th International Symposium on Nanstructures - Physics and Technology in INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NOS 3 AND 4, VOLUME: 6, NÚMERO: 3-4
INDEXADO EM: 
Scopus 
WOS
Scopus WOS NO MEU: ResearcherID
ResearcherID22
TÃTULO: MBE growth of vertically ordered Ge quantum dots on Si Full Text
AUTORES: Nikiforov, AI; Ulyanov, VV; Teys, SA; Gutakovsky, AK; Pchelyakov, OP; Yakimov, AI; Fonseca, A; Leitao, JP ; Sobolev, NA;
PUBLICAÇÃO: 2007, FONTE: International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006 in Physica Status Solidi (C) Current Topics in Solid State Physics, VOLUME: 4, NÚMERO: 2
AUTORES: Nikiforov, AI; Ulyanov, VV; Teys, SA; Gutakovsky, AK; Pchelyakov, OP; Yakimov, AI; Fonseca, A; Leitao, JP ; Sobolev, NA;
PUBLICAÇÃO: 2007, FONTE: International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006 in Physica Status Solidi (C) Current Topics in Solid State Physics, VOLUME: 4, NÚMERO: 2
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TÃTULO: MBE growth of vertically ordered Ge quantum dots on Si
AUTORES: Nikiforov, AI; Ulyanov, VV; Teys, SA; Gutakovsky, AK; Pchelyakov, OP; Fonseca, A; Leitao, JP; Sobolev, NA;
PUBLICAÇÃO: 2007, FONTE: International Conference on Superlattices, Nano-Structures and Nano-Devices in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 2, VOLUME: 4, NÚMERO: 2
AUTORES: Nikiforov, AI; Ulyanov, VV; Teys, SA; Gutakovsky, AK; Pchelyakov, OP; Fonseca, A; Leitao, JP; Sobolev, NA;
PUBLICAÇÃO: 2007, FONTE: International Conference on Superlattices, Nano-Structures and Nano-Devices in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 2, VOLUME: 4, NÚMERO: 2
INDEXADO EM: WOS
WOS NO MEU: ResearcherID
ResearcherID24
TÃTULO: OPTICAL AND STRUCTURAL ANALYSIS OF Ge/Si QUANTUM DOTS GROWN ON A Si(001) SURFACE COVERED WITH A SiO 2 SUB-MONOLAYER Full Text
AUTORES: FONSECA, A; ALVES, E; LEITÃO, JP; SOBOLEV, NA; CARMO, MC; NIKIFOROV, A;
PUBLICAÇÃO: 2007, FONTE: Int. J. Nanosci. - International Journal of Nanoscience, VOLUME: 06, NÚMERO: 03n04
AUTORES: FONSECA, A; ALVES, E; LEITÃO, JP; SOBOLEV, NA; CARMO, MC; NIKIFOROV, A;
PUBLICAÇÃO: 2007, FONTE: Int. J. Nanosci. - International Journal of Nanoscience, VOLUME: 06, NÚMERO: 03n04
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TÃTULO: Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice Full Text
AUTORES: Fonseca, A; Sobolev, NA; Leitao, JP ; Alves, E ; Carmo, MC; Zakharov, ND; Werner, P; Tonkikh, AA; Cirlin, GE;
PUBLICAÇÃO: 2006, FONTE: Symposium on Si-based Photonics held at the EMRS 2006 Conference in JOURNAL OF LUMINESCENCE, VOLUME: 121, NÚMERO: 2
AUTORES: Fonseca, A; Sobolev, NA; Leitao, JP ; Alves, E ; Carmo, MC; Zakharov, ND; Werner, P; Tonkikh, AA; Cirlin, GE;
PUBLICAÇÃO: 2006, FONTE: Symposium on Si-based Photonics held at the EMRS 2006 Conference in JOURNAL OF LUMINESCENCE, VOLUME: 121, NÚMERO: 2
NO MEU: 
ORCID | ResearcherID
ORCID | ResearcherID26
TÃTULO: RBS/channeling study of buried Ge quantum dots grown in a Si layer Full Text
AUTORES: Fonseca, A; Alves, E ; Barradas, NP ; P. Leitao ; Sobolev, NA; Carmo, MC; Nikiforov, AI; Presting, H;
PUBLICAÇÃO: 2006, FONTE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, NÚMERO: 1-2 SPEC. ISS.
AUTORES: Fonseca, A; Alves, E ; Barradas, NP ; P. Leitao ; Sobolev, NA; Carmo, MC; Nikiforov, AI; Presting, H;
PUBLICAÇÃO: 2006, FONTE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, NÚMERO: 1-2 SPEC. ISS.
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID27
TÃTULO: Damage behaviour of GaAs/AlAs multilayer structures Full Text
AUTORES: Magalhaes, S; Fonseca, A; Franco, N; Barradas, NP ; Sobolev, N; Hey, R; Grahn, H; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, NÚMERO: 1-2 SPEC. ISS.
AUTORES: Magalhaes, S; Fonseca, A; Franco, N; Barradas, NP ; Sobolev, N; Hey, R; Grahn, H; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, NÚMERO: 1-2 SPEC. ISS.
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ResearcherID
ResearcherID28
TÃTULO: Beam analysis of Ge/Si dots grown on ultrathin SiO2 interlayers
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 2
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 2
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ORCID | ResearcherID
ORCID | ResearcherID29
TÃTULO: Damage behaviour of GaAs/AlAs multilayer structures Full Text
AUTORES: Magalhães, S; Fonseca, A; Franco, N; N.P Barradas; Sobolev, N; Hey, R; Grahn, H; Alves, E;
PUBLICAÇÃO: 2006, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 249, NÚMERO: 1-2
AUTORES: Magalhães, S; Fonseca, A; Franco, N; N.P Barradas; Sobolev, N; Hey, R; Grahn, H; Alves, E;
PUBLICAÇÃO: 2006, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 249, NÚMERO: 1-2
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TÃTULO: Optical and structural study of Ge/Si quantum dots on Si(100) surface covered with a thin silicon oxide layer Full Text
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2005, FONTE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, NÚMERO: SUPPL.
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2005, FONTE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, NÚMERO: SUPPL.
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID