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TÍTULO: Suppression of the photoluminescence quenching effect in self-assembled InAs/GaAs quantum dots  Full Text
AUTORES: Baidus, NV; Chahboun, A ; Gomes, MJM ; Vasilevskiy, MI ; Demina, PB; Uskova, EA; Zvonkov, BN;
PUBLICAÇÃO: 2005, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 87, NÚMERO: 5
INDEXADO EM: Scopus WOS CrossRef
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TÍTULO: 1.3-1.5 mu m electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures  Full Text
AUTORES: Baidus, NV; Zvonkov, BN; Mokeeva, PB; Uskova, EA; Tikhov, SV; Vasilevskiy, MI ; Gomes, MJM ; Filonovich, SA ;
PUBLICAÇÃO: 2004, FONTE: 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-13) in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 19, NÚMERO: 4
INDEXADO EM: Scopus WOS CrossRef
13
TÍTULO: Tuning the energy spectrum of InAs/GaAs quantum dots by varying the thickness and composition of the thin double GaAs/InGaAs cladding layer  Full Text
AUTORES: Karpovich, IA; Zvonkov, BN; Levichev, SB ; Baidus, NV; Tikhov, SV; Filatov, DO; Gorshkov, AP; Ermakov, SY;
PUBLICAÇÃO: 2004, FONTE: SEMICONDUCTORS, VOLUME: 38, NÚMERO: 4
INDEXADO EM: WOS CrossRef
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TÍTULO: CuPt-type ordering in In0.5Ga0.5P probed by photovoltage spectroscopy in semiconductor-electrolyte system
AUTORES: Baidus, NV; Vasilevskiy, MI ; Gomes, MJM ; Zvonkov, BN;
PUBLICAÇÃO: 2003, FONTE: 2003 International Conference Indium Phosphide and Related Materials in Conference Proceedings - International Conference on Indium Phosphide and Related Materials
INDEXADO EM: Scopus
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TÍTULO: Spontaneous ordering in InxGa1-xP (x≈0.5) alloys: FIR and Raman spectroscopy studies
AUTORES: Baidus, NV; Biryukov, AA; Rolo, AG ; Vasilevskiy, MI ; Vikhrova, OV; Zvonkov, BN;
PUBLICAÇÃO: 2002, FONTE: 14th Indium Phosphide and Related Materials Conference in Conference Proceedings - International Conference on Indium Phosphide and Related Materials
INDEXADO EM: Scopus
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TÍTULO: Photoelectric spectroscopy of InAs/GaAs quantum dot heterostructures in semiconductor/electrolyte system
AUTORES: Karpovich, IA; Levichev, SB; Morozov, SV; Zvonkov, BN; Filatov, DO; Gorshkov, AP; Ermakov, SY;
PUBLICAÇÃO: 2002, FONTE: Nanophotonics Workshop in IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, VOLUME: 66, NÚMERO: 2
INDEXADO EM: WOS
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TÍTULO: Photoelectronic properties of InGaAs/GaAs heterostructures with combined quantum well and self-organized quantum dot layers
AUTORES: Karpovich, IA; Levichev, SB; Baidus, NV; Zvonkov, BN; Filatov, DO;
PUBLICAÇÃO: 2002, FONTE: 12th International Semicoducting and Insulating Materials Conference (SIMC-XII2002) in 2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS
INDEXADO EM: WOS
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TÍTULO: Investigation of the buried InAs/GaAs quantum dots by atomic force microscopy combined with selective chemical etching
AUTORES: Karpovich, IA; Baidus, NV; Zvonkov, BN; Filatov, DO; Levichev, SB; Zdoroveishev, AV; Perevoshikov, VA;
PUBLICAÇÃO: 2001, FONTE: Scanning Probe Microscopy 2001 Workshop in PHYSICS OF LOW-DIMENSIONAL STRUCTURES, VOLUME: 3-4
INDEXADO EM: WOS
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TÍTULO: Extremely uniform InAs/GaAs quantum dots emitting at 1.46 mkm at room temperature grown by MOCVD with Bi doping
AUTORES: Zvonkov, BN; Karpovich, IA; Baidus, NV; Filatov, DO; Gushina, YY; Morozov, SV; Levichev, SB;
PUBLICAÇÃO: 2001, FONTE: 25th International Conference on the Physics of Semiconductors (ICPS25) in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, VOLUME: 87
INDEXADO EM: WOS
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