Eduardo José Ramos Morgado
AuthID: R-000-4F2
11
TÃTULO: Metastable defects and recombination in hydrogenated amorphous silicon
AUTORES: Morgado, E; Henriques, RT ;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, NÚMERO: PART 1
AUTORES: Morgado, E; Henriques, RT ;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, NÚMERO: PART 1
INDEXADO EM: Scopus WOS
12
TÃTULO: Transition from tunneling to Poole-Frenkel type transport in aluminum-nitride
AUTORES: Schwarz, R ; Sun, JJ; Rocha, R ; Morgado, E; Freitas, PP ;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, NÚMERO: PART 2
AUTORES: Schwarz, R ; Sun, JJ; Rocha, R ; Morgado, E; Freitas, PP ;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, NÚMERO: PART 2
INDEXADO EM: Scopus WOS