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Gas Immersion Laser Doping: N++ Phosphorus Doping on P+ Cz-Si Wafers with a Highly Doped P++ Emitter

AuthID
P-00Y-W8Y

Author(s)

Serra, F

Gaspar, G

Viana, A

Arumughan, J

Costa, I

Pêra, D

Silva, J

Vines, L

Serra, J

Lobato, K

Editor(es)

Hahn,G;Verlinden,P;Ballif,C;Dubois,S;Glunz,S;Peibst,R;Poortmans,J;Weeber,A

Tipo de Documento

Proceedings Paper

Year published

2023

Publicado

in AIP Conference Proceedings, ISSN: 0094-243X

Volume: 2826

Conference

12Th International Conference on Crystalline Silicon Photovoltaics, Siliconpv 2022, Date: 28 March 2022 through 30 March 2022, Location: Hybrid, Konstanz

Indexing

Scopus^®

Crossref^®

Google Scholar^®

Metadata
Fontes

Publication Identifiers

DOI: 10.1063/5.0140455

SCOPUS: 2-s2.0-85167426950

Source Identifiers

ISSN: 0094-243X

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Gas Immersion Laser Doping: N++ Phosphorus Doping on P+ Cz-Si Wafers with a Highly Doped P++ Emitter

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Gas Immersion Laser Doping: N++ Phosphorus Doping on P+ Cz-Si Wafers with a Highly Doped P++ Emitter

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