Effect of an Interfacial Oxide Layer in the Annealing Behaviour of Au/A-Si : H Mis Photodiodes

AuthID
 P-000-9YX
9
Author(s)
Andreu, J
·
Tipo de Documento
Article
Year published
2004
Publicado
in JOURNAL OF NON-CRYSTALLINE SOLIDS, ISSN: 0022-3093
Volume: 338, Número: 1 SPEC. ISS., Páginas: 810-813 (4)
Conference
20Th International Conference on Amorphous and Microcrystalline Semiconductors, Date: AUG 25-29, 2003, Location: Campos do Jordao, BRAZIL
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Publication Identifiers
SCOPUS: 2-s2.0-2942588791
Wos: WOS:000222219000182
Source Identifiers
ISSN: 0022-3093
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