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Performances of Hafnium Oxide Produced by Radio Frequency Sputtering for Gate Dielectric Application

AuthID
P-000-9YZ

Author(s)

Pereira, L

Marques, A

Aguas, H

Nedev, N

Georgiev, S

Fortunato, E

Martins, R

Editor(es)

Dimoulas A.Fompeyrine J.Fanciulli M.Alexe M.Os H.J.

Tipo de Documento

Article

Year published

2004

Publicado

in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, ISSN: 0921-5107

Volume: 109, Número: 1-3, Páginas: 89-93 (5)

Conference

Symposium on Functional Metal Oxides - Semiconductor Structures Held at the E-Mrs 2003 Meeting, Date: JUN 10-13, 2003, Location: Strasbourg, FRANCE, Patrocinadores: European Mat Res Soc

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Fontes

Publication Identifiers

DOI: 10.1016/j.mseb.2003.10.053

SCOPUS: 2-s2.0-2342450573

Wos: WOS:000221657000020

Source Identifiers

ISSN: 0921-5107

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Performances of Hafnium Oxide Produced by Radio Frequency Sputtering for Gate Dielectric Application

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