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Effect of the Tunnelling Oxide Growth by H2O2 Oxidation on the Performance of A-Si : H Mis Photodiodes

AuthID
P-000-9Z2

Author(s)

Aguas, H

Perreira, L

Silva, RJC

Fortunato, E

Martins, R

Editor(es)

Dimoulas A.Fompeyrine J.Fanciulli M.Alexe M.Os H.J.

Tipo de Documento

Article

Year published

2004

Publicado

in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, ISSN: 0921-5107

Volume: 109, Número: 1-3, Páginas: 256-259 (4)

Conference

Symposium on Functional Metal Oxides - Semiconductor Structures Held at the E-Mrs 2003 Meeting, Date: JUN 10-13, 2003, Location: Strasbourg, FRANCE, Patrocinadores: European Mat Res Soc

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Publication Identifiers

DOI: 10.1016/j.mseb.2003.10.075

SCOPUS: 2-s2.0-2442436531

Wos: WOS:000221657000055

Source Identifiers

ISSN: 0921-5107

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Effect of the Tunnelling Oxide Growth by H2O2 Oxidation on the Performance of A-Si : H Mis Photodiodes

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Effect of the Tunnelling Oxide Growth by H2O2 Oxidation on the Performance of A-Si : H Mis Photodiodes

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