Modelling of the Composition Segregation Effect During Epitaxial Growth of Ingaas Quantum Well Heterostructures

AuthID
P-003-42N
Tipo de Documento
Article
Year published
2010
Publicado
in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ISSN: 0268-1242
Volume: 25, Número: 8, Páginas: 085008 (7)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-78149267647
Wos: WOS:000280275800010
Source Identifiers
ISSN: 0268-1242
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